Si and Al lines were deposited on glass substrates using a transfer technique based on the explosive release of hydrogen from a hydrogenated amorphous Si film melted by a laser pulse. The Si lines have a minimum width of 4.5 μm and are well defined, while the Al lines are wider and less uniform. Analysis of time-resolved infrared transmission signals reveals that the lines do not break into droplets upon ejection, in contrast to the behavior of unpatterned films. This difference is attributed to the escape of hydrogen through the sides of the molten lines into the adjacent material.

1.
D.
Toet
,
M. O.
Thompson
,
P. M.
Smith
, and
T. W.
Sigmon
,
Appl. Phys. Lett.
74
,
2170
(
1999
).
2.
J.
Bohandy
,
B. F.
Kim
, and
F. J.
Adrian
,
J. Appl. Phys.
60
,
1538
(
1986
).
3.
D.
Toet
,
P. M.
Smith
,
T. W.
Sigmon
, and
M. O.
Thompson
,
J. Appl. Phys.
87
,
3637
(
2000
).
4.
D.
Toet
,
M. O.
Thompson
,
P. M.
Smith
,
P. G.
Carey
, and
T. W.
Sigmon
,
Jpn. J. Appl. Phys., Part 2
38
,
L1149
(
1999
).
5.
T. F.
Deutsch
,
D. J.
Ehrlich
, and
R. M.
Osgood
, Jr.
,
Appl. Phys. Lett.
35
,
175
(
1979
).
6.
H.
Gleskova
and
S.
Wagner
,
IEEE Electron Device Lett.
16
,
418
(
1995
).
7.
A. K. Verma, M. A. Hadley, H.-J. J. Yeh, and J. S. Smith, in Proceedings of the 45th Electronic Components and Technology Conference (IEEE, New York, 1995), p. 1263.
8.
A. M.
Bastawros
and
M. Z.
Said
,
J. Mater. Sci.
28
,
1143
(
1993
).
This content is only available via PDF.
You do not currently have access to this content.