Epitaxial SrBi2Nb2O9 thin films have been grown on (110) SrTiO3 substrates by pulsed laser deposition. Four-circle x-ray diffraction and transmission electron microscopy reveal nearly phase pure epitaxial films with the c axis of the films at 45° with respect to the substrate normal. Electrical characterization is presented for films grown on epitaxial SrRuO3 electrodes. The low-field relative permittivity was 235, the remanent polarization was 11.4 μC/cm2, and the dielectric loss was 3.0% for 0.3-μm-thick films. From the remanent polarization and an understanding of the epitaxial geometry, a lower bound of 22.8 μC/cm2 was determined for the spontaneous polarization of SrBi2Nb2O9.

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