Ferroelectric materials of the solid-solution system were synthesized, and their structural and ferroelectric properties were investigated. Atomic displacements of the ions in the octahedron significantly increase as x increases, which leads to more structural distortion of the perovskite-type unit. The layer, in contrast, is less distorted in than in The contribution of the perovskite-type unit to total ferroelectric polarization is greater in the sample, while that of the layer is less; consequently, the total calculated polarization slightly increases. The ferroelectric Curie temperature also increases from 300 to Three short (Ta,Nb)–O bonds in the octahedron, whose lengths are less than 2 Å, have a covalent character, and the substitution of Nb for Ta makes the bonds more covalent. The strong covalent interaction of the (Ta,Nb)–O bonds increases the structural distortion, resulting in the higher ferroelectric Curie temperature and the larger contribution of the perovskite-type unit to the total spontaneous ferroelectric polarization.
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23 October 2000
Research Article|
October 23 2000
Structural distortion and ferroelectric properties of
Y. Shimakawa;
Y. Shimakawa
Fundamental Research Laboratories, NEC Corporation, 34 Miyukigaoka, Tsukuba 305-8501, Japan
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Y. Kubo;
Y. Kubo
Fundamental Research Laboratories, NEC Corporation, 34 Miyukigaoka, Tsukuba 305-8501, Japan
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Y. Tauchi;
Y. Tauchi
Institute for Materials Science, University of Tsukuba, 1-1-1 Tennodai, Tsukuba 305-8577, Japan
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T. Kamiyama;
T. Kamiyama
Institute for Materials Science, University of Tsukuba, 1-1-1 Tennodai, Tsukuba 305-8577, Japan
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H. Asano;
H. Asano
Institute for Materials Science, University of Tsukuba, 1-1-1 Tennodai, Tsukuba 305-8577, Japan
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F. Izumi
F. Izumi
National Institute for Research in Inorganic Materials, 1-1 Namiki, Tsukuba 305-0044, Japan
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Appl. Phys. Lett. 77, 2749–2751 (2000)
Article history
Received:
June 19 2000
Accepted:
August 31 2000
Citation
Y. Shimakawa, Y. Kubo, Y. Tauchi, T. Kamiyama, H. Asano, F. Izumi; Structural distortion and ferroelectric properties of . Appl. Phys. Lett. 23 October 2000; 77 (17): 2749–2751. https://doi.org/10.1063/1.1319509
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