The transition in diamond crystal morphology from well-faceted microcrystalline to nanocrystalline phases as a function of increasing argon (Ar) concentration has been studied in a hot-filament chemical vapor deposition (HFCVD) system. The range of Ar concentration in a Ar–methane–hydrogen mixture that permits well-faceted diamond growth is up to 90%. At a concentration of 95.5%, a marked transition into nanocrystalline diamond phase could be observed. Although no graphitic phases were observed by transmission electron microscope and x-ray diffraction up to 95.5% Ar concentration, Raman analyses revealed a proportionate increase in amorphous carbon content with an increase in Ar concentration. The addition of Ar appears to create an electron-rich gas environment because a plasma can be readily discharged by applying a bias to the sample. Analysis of the plasma by optical emission spectroscopy revealed a linear correlation between Ar addition and the occurrence of dimers in the plasma. Our results identified the narrow Ar-methane-hydrogen composition window that is effective for the growth of thick and smooth nanocrystalline diamond in HFCVD.
Skip Nav Destination
Article navigation
23 October 2000
Research Article|
October 23 2000
Compositional mapping of the argon–methane–hydrogen system for polycrystalline to nanocrystalline diamond film growth in a hot-filament chemical vapor deposition system
T. Lin;
T. Lin
Department of Physics, National University of Singapore, Lower Kent Ridge Road, Singapore 119260
Search for other works by this author on:
G. Y. Yu;
G. Y. Yu
Department of Physics, National University of Singapore, Lower Kent Ridge Road, Singapore 119260
Search for other works by this author on:
A. T. S. Wee;
A. T. S. Wee
Department of Physics, National University of Singapore, Lower Kent Ridge Road, Singapore 119260
Search for other works by this author on:
Z. X. Shen;
Z. X. Shen
Department of Physics, National University of Singapore, Lower Kent Ridge Road, Singapore 119260
Search for other works by this author on:
Kian Ping Loh
Kian Ping Loh
Department of Chemistry, National University of Singapore, Lower Kent Ridge Road, Singapore 119260
Search for other works by this author on:
Appl. Phys. Lett. 77, 2692–2694 (2000)
Article history
Received:
April 20 2000
Accepted:
August 30 2000
Citation
T. Lin, G. Y. Yu, A. T. S. Wee, Z. X. Shen, Kian Ping Loh; Compositional mapping of the argon–methane–hydrogen system for polycrystalline to nanocrystalline diamond film growth in a hot-filament chemical vapor deposition system. Appl. Phys. Lett. 23 October 2000; 77 (17): 2692–2694. https://doi.org/10.1063/1.1320039
Download citation file:
Pay-Per-View Access
$40.00
Sign In
You could not be signed in. Please check your credentials and make sure you have an active account and try again.
Citing articles via
Roadmap on photonic metasurfaces
Sebastian A. Schulz, Rupert. F. Oulton, et al.
Superconducting flip-chip devices using indium microspheres on Au-passivated Nb or NbN as under-bump metallization layer
Achintya Paradkar, Paul Nicaise, et al.