Dislocation-free high-quality AlGaN/GaN heterostructures have been grown by molecular-beam epitaxy on semi-insulating bulk GaN substrates. Hall measurements performed in the 300 K–50 mK range show a low-temperature electron mobility exceeding 60 000 for an electron sheet density of Magnetotransport experiments performed up to 15 T exhibit well-defined quantum Hall-effect features. The structures corresponding to the cyclotron and spin splitting were clearly resolved. From an analysis of the Shubnikov de Hass oscillations and the low-temperature mobility we found the quantum and transport scattering times to be 0.4 and 8.2 ps, respectively. The high ratio of the scattering to quantum relaxation time indicates that the main scattering mechanisms, at low temperatures, are due to long-range potentials, such as Coulomb potentials of ionized impurities.
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16 October 2000
Research Article|
October 16 2000
High electron mobility in AlGaN/GaN heterostructures grown on bulk GaN substrates
E. Frayssinet;
E. Frayssinet
High Pressure Research Center, UNIPRESS, Polish Academy of Sciences, 01142 Warsaw, Poland
G.E.S., UMR5650, CNRS–Université Montpellier 2, 34095 Montpellier, France
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W. Knap;
W. Knap
Department of ECSE and CIEEM, Rensselaer Polytechnic Institute, Troy, New York 12180
High Pressure Research Center, UNIPRESS, P.A.S. 01142 Warsaw, Poland
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P. Lorenzini;
P. Lorenzini
CNRS–CRHEA, rue Bernard Grégory, F-06560 Valbonne-Sophia-Antipolis, France
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N. Grandjean;
N. Grandjean
CNRS–CRHEA, rue Bernard Grégory, F-06560 Valbonne-Sophia-Antipolis, France
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J. Massies;
J. Massies
CNRS–CRHEA, rue Bernard Grégory, F-06560 Valbonne-Sophia-Antipolis, France
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C. Skierbiszewski;
C. Skierbiszewski
High Pressure Research Center, UNIPRESS, P.A.S. 01142 Warsaw, Poland
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T. Suski;
T. Suski
High Pressure Research Center, UNIPRESS, P.A.S. 01142 Warsaw, Poland
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I. Grzegory;
I. Grzegory
High Pressure Research Center, UNIPRESS, P.A.S. 01142 Warsaw, Poland
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S. Porowski;
S. Porowski
High Pressure Research Center, UNIPRESS, P.A.S. 01142 Warsaw, Poland
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G. Simin;
G. Simin
Department of ECE, University of South Carolina, Columbia, South Carolina 29208
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X. Hu;
X. Hu
Department of ECE, University of South Carolina, Columbia, South Carolina 29208
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M. Asif Khan;
M. Asif Khan
Department of ECE, University of South Carolina, Columbia, South Carolina 29208
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M. S. Shur;
M. S. Shur
Department of ECSE and CIEEM, Rensselaer Polytechnic Institute, Troy, New York 12180
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R. Gaska;
R. Gaska
Department of ECSE and CIEEM, Rensselaer Polytechnic Institute, Troy, New York 12180
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D. Maude
D. Maude
Grenoble High Magnetic Field Laboratory, CNRS–MPI, 38000 Grenoble, France
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Appl. Phys. Lett. 77, 2551–2553 (2000)
Article history
Received:
April 18 2000
Accepted:
August 09 2000
Citation
E. Frayssinet, W. Knap, P. Lorenzini, N. Grandjean, J. Massies, C. Skierbiszewski, T. Suski, I. Grzegory, S. Porowski, G. Simin, X. Hu, M. Asif Khan, M. S. Shur, R. Gaska, D. Maude; High electron mobility in AlGaN/GaN heterostructures grown on bulk GaN substrates. Appl. Phys. Lett. 16 October 2000; 77 (16): 2551–2553. https://doi.org/10.1063/1.1318236
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