High carbon concentrations at distinct regions at thermally-grown interfaces have been detected by electron energy loss spectroscopy (EELS). The thickness of these C-rich regions is estimated to be 10–15 Å. The oxides were grown on n-type 6H–SiC at 1100 °C in a wet ambient for 4 h immediately after cleaning the substrates with the complete RCA process. In contrast, C-rich regions were not detected from EELS analyses of thermally grown interfaces nor of chemical vapor deposition deposited interfaces. Silicon-rich layers within the SiC substrate adjacent to the thermally grown interface were also evident. The interface state density in metal–oxide–SiC diodes (with thermally grown was approximately eV−1 at eV, which compares well with reported values for SiC metal–oxide–semiconductor (MOS) diodes that have not received a postoxidation anneal. The C-rich regions and the change in SiC stoichiometry may be associated with the higher than desirable and the low channel mobilities in SiC-based MOS field effect transistors.
Skip Nav Destination
Article navigation
2 October 2000
Research Article|
October 02 2000
High-carbon concentrations at the silicon dioxide–silicon carbide interface identified by electron energy loss spectroscopy
K. C. Chang;
K. C. Chang
Department of Materials Science and Engineering, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213
Search for other works by this author on:
N. T. Nuhfer;
N. T. Nuhfer
Department of Materials Science and Engineering, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213
Search for other works by this author on:
L. M. Porter;
L. M. Porter
Department of Materials Science and Engineering, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213
Search for other works by this author on:
Q. Wahab
Q. Wahab
Department of Physics, Linköping University, S-581 83 Linköping, Sweden
Search for other works by this author on:
Appl. Phys. Lett. 77, 2186–2188 (2000)
Article history
Received:
May 18 2000
Accepted:
August 04 2000
Citation
K. C. Chang, N. T. Nuhfer, L. M. Porter, Q. Wahab; High-carbon concentrations at the silicon dioxide–silicon carbide interface identified by electron energy loss spectroscopy. Appl. Phys. Lett. 2 October 2000; 77 (14): 2186–2188. https://doi.org/10.1063/1.1314293
Download citation file:
Pay-Per-View Access
$40.00
Sign In
You could not be signed in. Please check your credentials and make sure you have an active account and try again.
Citing articles via
Roadmap on photonic metasurfaces
Sebastian A. Schulz, Rupert. F. Oulton, et al.
Superconducting flip-chip devices using indium microspheres on Au-passivated Nb or NbN as under-bump metallization layer
Achintya Paradkar, Paul Nicaise, et al.
Special issue APL organic and hybrid photodetectors
Karl Leo, Canek Fuentes-Hernandez, et al.
Related Content
Low interface state density of SiC-based metal–oxide–semiconductor structure formed with perchloric acid at 203 °C
Appl. Phys. Lett. (July 2002)
Effect of nitric oxide annealing on the interface trap density near the conduction bandedge of 4H–SiC at the oxide /(112̄0) 4H–SiC interface
Appl. Phys. Lett. (March 2004)
Formation of a SiO 2 /SiC structure at 203 ° C by use of perchloric acid
Appl. Phys. Lett. (April 2001)
Shallow electron traps at the 4H–SiC/SiO 2 interface
Appl. Phys. Lett. (January 2000)
Valence band offset and hole injection at the 4H-, 6H-SiC/SiO 2 interfaces
Appl. Phys. Lett. (September 2000)