We report on the implementation of crystal ion slicing in potassium tantalate (KTaO3). Deep-ion implantation is used to create a buried sacrificial layer in (001) single-crystal wafers of KTaO3. 10-μm-thick single-crystal films have been fabricated by adjusting the stress level in the implantation damage layer to induce room-temperature etchless exfoliation. Crack propagation is found to depend critically on implantation dose, with a threshold dose for exfoliation near 1×1016 cm−2. A significant implantation-induced etch selectivity between the sacrificial layer and the rest of the sample is also found. Capacitance measurements show that the films exhibit a bulk-like dielectric constant and loss tangents below 0.01 at low temperatures.

Topics
Dielectric properties, Ion implantation, Chemical elements, Chemical compounds
1.
M.
Levy
,
R. M.
Osgood
, Jr.,
A.
Kumar
, and
H.
Bakhru
,
Appl. Phys. Lett.
71
,
2617
(
1997
).
Google Scholar
 
2.
M.
Levy
,
R. M.
Osgood
, Jr.,
R.
Liu
,
L. E.
Cross
,
G. S.
Cargill
III,
A.
Kumar
, and
H.
Bakhru
,
Appl. Phys. Lett.
73
,
2293
(
1998
).
Google Scholar
 
3.
M.
Bruel
,
Electron. Lett.
31
,
1201
(
1995
).
Google Scholar
 
4.
E. Nadgorny (private communication).
5.
B. S.
Kwak
,
A.
Erbil
,
J. D.
Budai
,
M. F.
Chisholm
,
L. A.
Boatner
, and
B. J.
Wilkens
,
Phys. Rev. B
49
,
14865
(
1994
).
Google Scholar
 
6.
G. A.
Samara
and
B.
Morosin
,
Phys. Rev. B
8
,
1256
(
1973
).
Google Scholar
 
7.
These data were taken in collaboration with Professor Mark Reeves at George Washington University. The measurements will be the subject of a separate publication.
8.
J. D.
Siegwarth
,
J. C.
Holste
, and
A. J.
Morrow
,
J. Appl. Phys.
47
,
4791
(
1976
).
Google Scholar
 
9.
G. V.
Belokopytov
,
I. V.
Ivanov
,
S. I.
Katanov
,
N. N.
Moiseev
, and
P. P.
Syrnikov
,
Sov. Phys. Solid State
24
,
1064
(
1982
).
Google Scholar
 
10.
O. G.
Vendik
,
L. T.
Ter-Martirosyan
, and
S. P.
Zubko
,
J. Appl. Phys.
84
,
993
(
1998
).
Google Scholar
 
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