We report on optical waveguiding in the channel region of an epitaxial GaN film defined by a SiN cladding layer of a stripe window pattern. We carried out numerical analyses on the various possible effects that might contribute to the overcompensation of the negative loading effect of a SiN cladding window. This includes the photoelastic, piezoelectric, and electro-optic effects in GaN induced by a SiN window layer. The analysis result suggests that the observed phenomenon can be ascribed to a combination of both the photoelastic and electro-optic effects, and especially that the spontaneous polarization field in undoped GaN with a low background carrier concentration might play an important role in forming a channel waveguide in the window region.
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18 September 2000
Research Article|
September 18 2000
Thin-film-induced index change and channel waveguiding in epitaxial GaN films
Euisong Kim;
Euisong Kim
Department of Electrical Engineering, University of Pittsburgh, Pittsburgh, Pennsylvania 15261
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Byounghee Lee;
Byounghee Lee
Department of Electrical Engineering, University of Pittsburgh, Pittsburgh, Pennsylvania 15261
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Ahmed Nahhas;
Ahmed Nahhas
Department of Electrical Engineering, University of Pittsburgh, Pittsburgh, Pennsylvania 15261
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Hong Koo Kim
Hong Koo Kim
Department of Electrical Engineering, University of Pittsburgh, Pittsburgh, Pennsylvania 15261
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Appl. Phys. Lett. 77, 1747–1749 (2000)
Article history
Received:
January 11 2000
Accepted:
July 24 2000
Citation
Euisong Kim, Byounghee Lee, Ahmed Nahhas, Hong Koo Kim; Thin-film-induced index change and channel waveguiding in epitaxial GaN films. Appl. Phys. Lett. 18 September 2000; 77 (12): 1747–1749. https://doi.org/10.1063/1.1311315
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