A resonant-cavity avalanche photodiode using a GaNAs absorption region grown on GaAs has been demonstrated. The peak quantum efficiency was 59% at 1.064 μm with a full width at half maximum of 11 nm. The absorption coefficient was determined to be α=9×103/cm at this wavelength. The devices exhibited gain up to 100 at a low breakdown voltage of 13 V.

Topics
Electrical properties and parameters, Photodiodes, Quantum efficiency, Optical absorption, Semiconductors
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2000
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