Hydrogen passivation of deep levels in $n–GaN$ Available to Purchase

Differential postgrowth hydrogen passivation of deep levels in $n–GaN$ grown by metal-organic chemical vapor deposition has been directly observed by means of both deep level transient spectroscopy and deep level optical spectroscopy. Two deep levels found at $Ec−Et=0.62$ and 1.35 eV show strong H passivation effects, with their concentrations decreasing by a factor of ⩾30 and ∼14, respectively. The decrease in the 0.62 eV trap concentration together with its correlation with the presence of Mg in $n–GaN$ is consistent with Mg–H complex formation. A band of closely spaced deep levels observed at $Ec−Et=2.64–2.80 eV$ narrows to $Ec−Et=2.74–2.80 eV$ after hydrogenation, consistent with hydrogen complexing with $VGa3−$ defects as anticipated by earlier theoretical results. Finally, a deep level at $Ec−Et=3.22 eV$ likely related to background acceptors remains unaffected by hydrogen.