We report on structural, optical, and electrical properties of heterostructures grown on sapphire and 6H–SiC substrates. Our results demonstrate that incorporation of In reduces the lattice mismatch, between AlInGaN and GaN, and that an In to Al ratio of close to 1:5 results in nearly strain-free heterostructures. The observed reduction in band gap, determined from photoluminescence measurements, is more than 1.5 times higher than estimated from the linear dependencies of and on the In molar fraction. The incorporation of In and resulting changes in the built-in strain in AlInGaN/GaN heterostructures strongly affect the transport properties of the two-dimensional electron gas at the heterointerface. The obtained results demonstrate the potential of strain energy band engineering for GaN-based electronic applications.
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28 February 2000
Research Article|
February 28 2000
Lattice and energy band engineering in AlInGaN/GaN heterostructures
M. Asif Khan;
M. Asif Khan
Department of Electrical and Computer Engineering, University of South Carolina, Columbia, South Carolina 29208
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J. W. Yang;
J. W. Yang
Department of Electrical and Computer Engineering, University of South Carolina, Columbia, South Carolina 29208
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G. Simin;
G. Simin
Department of Electrical and Computer Engineering, University of South Carolina, Columbia, South Carolina 29208
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R. Gaska;
R. Gaska
Department of Electrical, Computer, and Systems Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180
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M. S. Shur;
M. S. Shur
Department of Electrical, Computer, and Systems Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180
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Hans-Conrad zur Loye;
Hans-Conrad zur Loye
Department of Chemistry and Biochemistry, University of South Carolina, Columbia, South Carolina 29208
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G. Tamulaitis;
G. Tamulaitis
Institute of Material Science and Applied Research, Vilnius University, Vilnius, Lithuania
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A. Zukauskas;
A. Zukauskas
Institute of Material Science and Applied Research, Vilnius University, Vilnius, Lithuania
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David J. Smith;
David J. Smith
Center for High Resolution Electron Microscopy, Center for Solid State Science, Arizona State University, Tempe, Arizona 85287-1704
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D. Chandrasekhar;
D. Chandrasekhar
Center for High Resolution Electron Microscopy, Center for Solid State Science, Arizona State University, Tempe, Arizona 85287-1704
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R. Bicknell-Tassius
R. Bicknell-Tassius
Jet Propulsion Laboratory, M/S 302-306, Pasadena, California 91109
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Appl. Phys. Lett. 76, 1161–1163 (2000)
Article history
Received:
April 20 1999
Accepted:
January 05 2000
Citation
M. Asif Khan, J. W. Yang, G. Simin, R. Gaska, M. S. Shur, Hans-Conrad zur Loye, G. Tamulaitis, A. Zukauskas, David J. Smith, D. Chandrasekhar, R. Bicknell-Tassius; Lattice and energy band engineering in AlInGaN/GaN heterostructures. Appl. Phys. Lett. 28 February 2000; 76 (9): 1161–1163. https://doi.org/10.1063/1.125970
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