In this work, the leakage currents induced by electrical stress and by irradiation are compared. We show that the Ig–Vg characteristics of a 5.4-nm-thick oxide are very similar for both types of stresses. Moreover, we show that the electrical stability and the annealing behavior of the defects at the origin of the leakage current are very similar. We demonstrate that the radiation-induced leakage current can be fully annealed. Comparing the properties of the stress-induced leakage current and the radiation-induced leakage current, we believe that these currents are both due to the same type of defects which are supposed to be related to trapped holes.

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