We present a comparison of the 8-band and empirical pseudopotential approaches to describing the electronic structure of pyramidal InAs/GaAs self-assembled quantum dots. We find a generally good agreement between the two methods. The most significant differences found in the calculation are (i) a reduced splitting of the electron p states (3 vs 24 meV), (ii) an incorrect in-plane polarization ratio for electron-hole dipole transitions (0.97 vs 1.24), and (iii) an over confinement of both electron (48 meV) and hole states (52 meV), resulting in a band gap error of 100 meV. We introduce a “linear combination of bulk bands” technique which produces results similar to a full direct diagonalization pseudopotential calculation, at a cost similar to the method.
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17 January 2000
Research Article|
January 17 2000
Comparison of the and direct diagonalization approaches to the electronic structure of InAs/GaAs quantum dots
L. W. Wang;
L. W. Wang
National Renewable Energy Laboratory, Golden, Colorado 80401
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A. J. Williamson;
A. J. Williamson
National Renewable Energy Laboratory, Golden, Colorado 80401
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Alex Zunger;
Alex Zunger
National Renewable Energy Laboratory, Golden, Colorado 80401
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H. Jiang;
H. Jiang
Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, Michigan 48109-2122
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J. Singh
J. Singh
Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, Michigan 48109-2122
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Appl. Phys. Lett. 76, 339–341 (2000)
Article history
Received:
September 13 1999
Accepted:
November 16 1999
Citation
L. W. Wang, A. J. Williamson, Alex Zunger, H. Jiang, J. Singh; Comparison of the and direct diagonalization approaches to the electronic structure of InAs/GaAs quantum dots. Appl. Phys. Lett. 17 January 2000; 76 (3): 339–341. https://doi.org/10.1063/1.125747
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