Second-order nonlinear optical processes including second-harmonic generation, optical rectification, and difference-frequency generation associated with intersubband transitions in wurtzite GaN/AlGaN quantum well (QW) are investigated theoretically. Taking into account the strain-induced piezoelectric (PZ) effects, we solve the electronic structure of the QW from coupled effective-mass Schrödinger equation and Poisson equation including the exchange-correlation effect under the local-density approximation. We show that the large PZ field in the QW breaks the symmetry of the confinement potential profile and leads to large second-order susceptibilities. We also show that the interband optical pump-induced electron-hole plasma results in an enhancement in the maximum value of the nonlinear coefficients and a redshift of the peak position in the nonlinear optical spectrum. By use of the difference-frequency generation, THz radiation can be generated from a with a pump laser of 1.55 μm.
Skip Nav Destination
,
,
Article navigation
17 January 2000
Research Article|
January 17 2000
Piezoelectric field-enhanced second-order nonlinear optical susceptibilities in wurtzite GaN/AlGaN quantum wells
Ansheng Liu;
Ansheng Liu
NASA Ames Research Center, M/S N229-1, Moffett Field, California 94035
Search for other works by this author on:
S.-L. Chuang;
S.-L. Chuang
NASA Ames Research Center, M/S N229-1, Moffett Field, California 94035
Search for other works by this author on:
C. Z. Ning
C. Z. Ning
NASA Ames Research Center, M/S N229-1, Moffett Field, California 94035
Search for other works by this author on:
Ansheng Liu
S.-L. Chuang
C. Z. Ning
NASA Ames Research Center, M/S N229-1, Moffett Field, California 94035
Appl. Phys. Lett. 76, 333–335 (2000)
Article history
Received:
August 27 1999
Accepted:
November 16 1999
Citation
Ansheng Liu, S.-L. Chuang, C. Z. Ning; Piezoelectric field-enhanced second-order nonlinear optical susceptibilities in wurtzite GaN/AlGaN quantum wells. Appl. Phys. Lett. 17 January 2000; 76 (3): 333–335. https://doi.org/10.1063/1.125736
Download citation file:
Pay-Per-View Access
$40.00
Sign In
You could not be signed in. Please check your credentials and make sure you have an active account and try again.
Citing articles via
Roadmap on photonic metasurfaces
Sebastian A. Schulz, Rupert. F. Oulton, et al.
Diamagnetic levitation of water realized with a simple device consisting of ordinary permanent magnets
Tomoya Naito, Tomoaki Suzuki, et al.
Charge localization in optoelectronic and photocatalytic applications: Computational perspective
Francesco Ambrosio, Julia Wiktor
Related Content
Piezoelectric field and its influence on the pressure behavior of the light emission from GaN/AlGaN strained quantum wells
Appl. Phys. Lett. (September 2001)
AlGaN/GaN high-electron mobility transistors with low thermal resistance grown on single-crystal diamond (111) substrates by metalorganic vapor-phase epitaxy
Appl. Phys. Lett. (April 2011)
Si-doped high Al-content AlGaN epilayers with improved quality and conductivity using indium as a surfactant
Appl. Phys. Lett. (March 2008)
The Bloch–Grüneisen mobility of two-dimensional electron gas in AlGaN/GaN heterostructures
Appl. Phys. Lett. (September 1999)
Direction-dependent band nonparabolicity effects on high-field transient electron transport in GaN
Appl. Phys. Lett. (May 2003)