We report on AlGaN/GaN heterostructures and heterostructure field-effect transistors (HFETs) fabricated on high-pressure-grown bulk GaN substrates. The electron gas channel exhibits excellent electronic properties with room-temperature electron Hall mobility as high as combined with a very large electron sheet density The HFET devices demonstrated better linearity of transconductance and low gate leakage, especially at elevated temperatures. We also present the comparative study of high-current AlGaN/GaN HFETs grown on bulk GaN, sapphire, and SiC substrates under the same conditions. We demonstrate that in the high-power regime, the self-heating effects, and not a dislocation density, is the dominant factor determining the device behavior.
GaN–AlGaN heterostructure field-effect transistors over bulk GaN substrates
M. Asif Khan, J. W. Yang, W. Knap, E. Frayssinet, X. Hu, G. Simin, P. Prystawko, M. Leszczynski, I. Grzegory, S. Porowski, R. Gaska, M. S. Shur, B. Beaumont, M. Teisseire, G. Neu; GaN–AlGaN heterostructure field-effect transistors over bulk GaN substrates. Appl. Phys. Lett. 19 June 2000; 76 (25): 3807–3809. https://doi.org/10.1063/1.126788
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