samples with grown by metalorganic vapor phase epitaxy were studied by low-temperature photoluminescence under hydrostatic pressure and photomodulated reflectance spectroscopy. The transformation from N acting as an isoelectronic impurity to N-induced band formation takes place at The N level does not shift with respect to the valence band edge of Concentration as well as hydrostatic-pressure dependence of the bands can be described by a three band kp description of the conduction band state and and the valence band at The model parameters for and were determined by fitting the model to the experimental data. Modeling the linewidth of the transition by combining the kp model and ion statistics leads to the conclusion that the electron-hole pairs are strongly localized.
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5 June 2000
Research Article|
June 05 2000
From N isoelectronic impurities to N-induced bands in the alloy
P. J. Klar;
P. J. Klar
Department of Physics and Materials Science Centre, Philipps-University, D-35032 Marburg, Germany
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H. Grüning;
H. Grüning
Department of Physics and Materials Science Centre, Philipps-University, D-35032 Marburg, Germany
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W. Heimbrodt;
W. Heimbrodt
Department of Physics and Materials Science Centre, Philipps-University, D-35032 Marburg, Germany
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J. Koch;
J. Koch
Department of Physics and Materials Science Centre, Philipps-University, D-35032 Marburg, Germany
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F. Höhnsdorf;
F. Höhnsdorf
Department of Physics and Materials Science Centre, Philipps-University, D-35032 Marburg, Germany
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W. Stolz;
W. Stolz
Department of Physics and Materials Science Centre, Philipps-University, D-35032 Marburg, Germany
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P. M. A. Vicente;
P. M. A. Vicente
GES, Université Montpellier II, Case Courier 074, F-34095 Montpellier Cedex 5, France
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J. Camassel
J. Camassel
GES, Université Montpellier II, Case Courier 074, F-34095 Montpellier Cedex 5, France
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Appl. Phys. Lett. 76, 3439–3441 (2000)
Article history
Received:
February 09 2000
Accepted:
April 11 2000
Citation
P. J. Klar, H. Grüning, W. Heimbrodt, J. Koch, F. Höhnsdorf, W. Stolz, P. M. A. Vicente, J. Camassel; From N isoelectronic impurities to N-induced bands in the alloy. Appl. Phys. Lett. 5 June 2000; 76 (23): 3439–3441. https://doi.org/10.1063/1.126671
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