Ultrashallow p+/n junctions formed by B+-ion implantation and annealed by spike rapid thermal annealing (RTA) or laser annealing were studied. The effect of the preamorphizing depth on the redistribution of boron atoms after annealing has also been investigated. Our results show that for ultrashallow junctions formed by ultra-low-energy ion implantation and spike RTA, the depth of the preamorphizing implant has very little impact on the junction depth. By optimizing the laser fluence and preamorphization depth, a highly activated, ultrashallow, and abrupt junction can be obtained using a 248 nm excimer laser. The secondary-ion-mass spectrometry results clearly indicate that a step-like profile with a junction depth of 370 Å (for a B+ implant at 1 keV) can be formed with a single-pulse laser irradiation at 0.5 J/cm2.

Topics
P-N junctions, Semiconductor device fabrication, Annealing, Ion implantation, Secondary ion mass spectrometry, Lasers, Chemical elements
1.
E. C.
Jones
and
E.
Ishida
,
Mater. Sci. Eng., R.
24
,
1
(
1998
).
Google Scholar
 
2.
J.
Park
,
Y-J.
Huh
, and
H.
Hwang
,
Appl. Phys. Lett.
74
,
1248
(
1999
).
Google Scholar
 
3.
P. A.
Stolk
,
H. J.
Gossman
,
D. J.
Eaglesham
,
D. C.
Jacobson
,
C. S.
Rafferty
,
G. H.
Gilmer
,
M.
Jaraiz
,
J. M.
Poate
,
H. S.
Luftman
, and
T. E.
Haynes
,
J. Appl. Phys.
81
,
6031
(
1997
).
Google Scholar
 
4.
A.
Agarwal
,
H.-J.
Gossmann
,
D. J.
Eaglesham
,
L.
Pelaz
,
D. C.
Jacobson
,
T. E.
Haynes
, and
Y.
Erokhin
,
Appl. Phys. Lett.
71
,
3141
(
1997
).
Google Scholar
 
5.
A. Agarwal, D. J. Eaglesham, H.-J. Gossmann, L. Pelaz, S. B. Herner, D. C. Jacobson, T. E. Haynes, Y. Erokhin, and R. Simonton, Tech. Dig. Int. Electron Devices Meet., 467 (1997).
6.
S. T. Dunham, S. Chakravarthi, and A. H. Gencer, Tech. Dig. Int. Electron Devices Meet., 501 (1998).
7.
S. Shishiguchi, A. Mineji, T. Hayashi, and S. Saito, Tech. Dig. VLSI Technol. Symp., 89 (1997).
8.
A.
Agarwal
,
A. T.
Fiory
, and
H. L.
Gossmann
,
Semicond. Int.
22
,
71
(
1999
).
Google Scholar
 
9.
B. Yu, Y. Wang, H. Wang, Q. Xiang, C. Riccobene, S. Talwar, and M. Lin, Tech. Dig. Int. Electron Devices Meet., 509 (1999).
10.
A.
Sultan
,
S.
Banerjee
,
S.
List
, and
V.
McNell
,
J. Appl. Phys.
83
,
8046
(
1998
).
Google Scholar
 
11.
M. C.
Ozturk
,
J. J.
Wortman
,
C. M.
Osburn
,
A.
Ajmera
,
G. A.
Rozgonyi
,
E.
Frey
,
W. K.
Chu
, and
C.
Lee
,
IEEE Trans. Electron Devices
35
,
659
(
1988
).
Google Scholar
 
12.
R. G. Wilson, F. A. Stevie, and C. W. Magee, Secondary Ion Mass Spectrometry—A Practical Handbook for Depth Profiling and Bulk Impurity Analysis (Wiley, New York, 1989), p. 2.1-1.
13.
R. F. Wood, C. W. White, and R. T. Young, in Pulsed Laser Processing of Semiconductors, Semiconductors and Semimetals, edited by R. K. Willardson and A. C. Beer (Academic, New York, Press, Inc., 1984), Vol. 23, p. 165.
14.
Y.
Makasi
,
M.
Suzuki
, and
A.
Kitagawa
,
J. Appl. Phys.
77
,
1766
(
1995
).
Google Scholar
 
15.
X.
Zhang
,
J. R.
Ho
, and
C. P.
Grigoropoulos
,
Int. J. Heat Mass Transf.
39
,
3844
(
1996
).
Google Scholar
 
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