N-Schottky and GaN junctions are currently used for different technologies. A comparison of the deep levels found throughout the entire band gap of grown by metal-organic chemical vapor deposition under both configurations is presented. Both deep level optical spectroscopy and deep level transient spectroscopy measurements are used allowing the observation of both majority and minority carrier traps. Deep levels at 1.35, 2.57–2.64, and 3.22 eV are observed for both diode configurations, with concentrations in the range. The 0.58–0.62 eV level appears correlated with residual Mg impurities in the side of the diode measured by secondary-ion-mass spectroscopy, while the 1.35 eV level concentration increases by a factor of ∼4 for the Schottky junction possibly correlating with the carbon profile. The 2.57–2.64 eV level is a minority carrier hole trap in likely related to the yellow photoluminescence band, and is detected both optically from the conduction band (2.64 eV) and thermally from the valence band (0.87 eV).
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22 May 2000
Research Article|
May 22 2000
Optically and thermally detected deep levels in n-type Schottky and GaN diodes Available to Purchase
A. Hierro;
A. Hierro
Department of Electrical Engineering, The Ohio State University, Columbus, Ohio 43210
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D. Kwon;
D. Kwon
Department of Electrical Engineering, The Ohio State University, Columbus, Ohio 43210
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S. A. Ringel;
S. A. Ringel
Department of Electrical Engineering, The Ohio State University, Columbus, Ohio 43210
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M. Hansen;
M. Hansen
Materials and Electrical and Computer Engineering Departments, University of California, Santa Barbara, California 93016
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J. S. Speck;
J. S. Speck
Materials and Electrical and Computer Engineering Departments, University of California, Santa Barbara, California 93016
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U. K. Mishra;
U. K. Mishra
Materials and Electrical and Computer Engineering Departments, University of California, Santa Barbara, California 93016
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S. P. DenBaars
S. P. DenBaars
Materials and Electrical and Computer Engineering Departments, University of California, Santa Barbara, California 93016
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A. Hierro
Department of Electrical Engineering, The Ohio State University, Columbus, Ohio 43210
D. Kwon
Department of Electrical Engineering, The Ohio State University, Columbus, Ohio 43210
S. A. Ringel
Department of Electrical Engineering, The Ohio State University, Columbus, Ohio 43210
M. Hansen
Materials and Electrical and Computer Engineering Departments, University of California, Santa Barbara, California 93016
J. S. Speck
Materials and Electrical and Computer Engineering Departments, University of California, Santa Barbara, California 93016
U. K. Mishra
Materials and Electrical and Computer Engineering Departments, University of California, Santa Barbara, California 93016
S. P. DenBaars
Materials and Electrical and Computer Engineering Departments, University of California, Santa Barbara, California 93016
Appl. Phys. Lett. 76, 3064–3066 (2000)
Article history
Received:
February 03 2000
Accepted:
March 28 2000
Citation
A. Hierro, D. Kwon, S. A. Ringel, M. Hansen, J. S. Speck, U. K. Mishra, S. P. DenBaars; Optically and thermally detected deep levels in n-type Schottky and GaN diodes. Appl. Phys. Lett. 22 May 2000; 76 (21): 3064–3066. https://doi.org/10.1063/1.126580
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