A p-i-n avalanche photodiode (APD) using GaNAs grown on GaAs has been demonstrated. Characterization of the excess noise in the material was used to determine that the ratio of ionization coefficients is The quantum efficiency was above 25% at 0.94 μm for 0.75% nitrogen incorporation. The APDs exhibited low dark currents (<60 nA/mm2 at 90% of breakdown) and a gain-bandwidth product of 42 GHz. GaNAs therefore shows promise for extending the operation of GaAs-based APDs to longer wavelengths.
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