We present the growth and characterization of photodiodes based on ZnBeSe and ZnMgBeSe compounds. High-quality diodes exhibiting dark current as low as 12 nA/cm2 at −2 V bias have been fabricated. The spectral response shows a high responsivity of 0.17 A/W at 450 nm, with a rejection of at longer wavelengths. Our results thus demonstrate the potential of ZnSe-based heterostructures for efficient detection in the visible-ultraviolet region.
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Research Article| January 10 2000
Zn(Mg)BeSe-based photodiodes operating in the blue-violet and near-ultraviolet spectral range
F. Vigué, E. Tournié, J.-P. Faurie; Zn(Mg)BeSe-based photodiodes operating in the blue-violet and near-ultraviolet spectral range. Appl. Phys. Lett. 10 January 2000; 76 (2): 242–244. https://doi.org/10.1063/1.125715
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