Iron depth profiles in a p-type silicon epitaxial layer on a p+-type silicon substrate have been examined by deep-level transient spectroscopy and computer simulations. By comparing the experimental results with the simulations, we revealed the position of the iron deep donor level to be 0.42±0.04 eV from the valence-band edge at 412–580 °C, which is in a device processing temperature range. The iron donor level was nearly temperature independent within error. Knowing the temperature dependence of the iron donor level at the device processing temperatures, we can design iron gettering in silicon more precisely.

1.
A. A. Istratov, H. Hieslmair, and E. R. Weber, Appl. Phys. A: Mater. Sci. Process. 70 (in press).
2.
S. A.
McHugo
,
R. J.
McDonald
,
W. R.
Smith
,
D. L.
Hurley
, and
E. R.
Weber
,
Appl. Phys. Lett.
73
,
1424
(
1998
).
Google Scholar
 
3.
S. A. McHugo, R. J. McDonald, W. R. Smith, D. L. Hurley, A. A. Istratov, H. Hieslmair, and E. R. Weber, in Defect and Impurity Engineered Semiconductors and Devices II, edited by S. Ashok, J. Chevallier, K. Sumino, B. L. Sopori, and W. Gots (Materials Research Society, Warrendale, PA, 1998), p. 361.
4.
D.
Gilles
,
W.
Schröter
, and
W.
Bergholz
,
Phys. Rev. B
41
,
5770
(
1990
).
Google Scholar
 
5.
E. R.
Weber
,
Appl. Phys. A: Solids Surf.
30
,
1
(
1983
).
Google Scholar
 
6.
H.
Hielsmair
,
A. A.
Istratov
,
C.
Flink
,
S. A.
McHugo
, and
E. R.
Weber
,
Physica B
273-274
,
441
(
1999
).
Google Scholar
 
7.
L. C.
Kimerling
and
J. L.
Benton
,
Physica B & C
116
,
297
(
1983
).
Google Scholar
 
8.
W.
Wijaranakula
,
J. Electrochem. Soc.
140
,
275
(
1993
).
Google Scholar
 
9.
H.
Reiss
,
C. S.
Fuller
, and
F. J.
Morin
,
Bell Syst. Tech. J.
35
,
535
(
1956
).
Google Scholar
 
10.
A. A.
Istratov
,
C.
Flink
,
H.
Hieslmair
, and
E. R.
Weber
,
Phys. Rev. Lett.
81
,
1243
(
1998
).
Google Scholar
 
11.
A. A.
Istratov
,
H.
Hieslmair
, and
E. R.
Weber
,
Appl. Phys. A: Mater. Sci. Process.
69A
,
13
(
1999
).
Google Scholar
 
12.
H. Hieslmair, Ph.D. thesis at University of California, Berkeley (1998).
13.
D.
Stievenard
,
M.
Lannoo
, and
J. C.
Bourgoin
,
Solid-State Electron.
28
,
485
(
1985
).
Google Scholar
 
14.
P. Blood and J. W. Orton, in The Electrical Characterization of Semiconductors: Majority Carriers and Electron States, edited by N. H. March (Academic, London, 1992), p. 358.
15.
F.
Feichtinger
,
Acta Phys. Austriaca
51
,
161
(
1979
).
Google Scholar
 
This content is only available via PDF.
© 2000 American Institute of Physics.
2000
American Institute of Physics
You do not currently have access to this content.