We have studied deep-level impurities in GaInNAs solar cells using deep-level transient spectroscopy (DLTS). These films were grown by atmospheric- and low-pressure metalorganic vapor-phase epitaxy. The base layer is doped with silicon, and the emitter layer is zinc doped. Two types of samples have been studied: samples were grown with and without the addition of oxygen impurity. Two electron traps were found in all samples. These are designated as: E1, at E2 at and E2* at 0.77 eV. With the addition of oxygen impurity, DLTS showed additional traps designated as E3 (electron) at and H3 (hole) at eV. Using secondary ion mass spectroscopy, the oxygen concentration was found to be about and in two sets of samples. However, only samples containing oxygen contained the two near-midgap levels (E3 and H3). We present evidence that these levels are associated with the oxygen defect. As we change the dc bias voltage, the E3 trap disappears in unison with the appearance of the H3 trap. Furthermore, E3 and H3 trap levels have comparable capture cross sections. This oxygen-related trap is an effective recombination center. The measured Shockley–Hall–Read lifetime for this center is about 0.6 μs.
Skip Nav Destination
Article navigation
24 April 2000
Research Article|
April 24 2000
Evidence of an oxygen recombination center in GaInNAs solar cells
A. Balcioglu;
A. Balcioglu
National Renewable Energy Laboratory, Golden, Colorado 80401
Search for other works by this author on:
R. K. Ahrenkiel;
R. K. Ahrenkiel
National Renewable Energy Laboratory, Golden, Colorado 80401
Search for other works by this author on:
D. J. Friedman
D. J. Friedman
National Renewable Energy Laboratory, Golden, Colorado 80401
Search for other works by this author on:
Appl. Phys. Lett. 76, 2397–2399 (2000)
Article history
Received:
January 20 2000
Accepted:
February 29 2000
Citation
A. Balcioglu, R. K. Ahrenkiel, D. J. Friedman; Evidence of an oxygen recombination center in GaInNAs solar cells. Appl. Phys. Lett. 24 April 2000; 76 (17): 2397–2399. https://doi.org/10.1063/1.126383
Download citation file:
Pay-Per-View Access
$40.00
Sign In
You could not be signed in. Please check your credentials and make sure you have an active account and try again.
Citing articles via
Roadmap on photonic metasurfaces
Sebastian A. Schulz, Rupert. F. Oulton, et al.
Superconducting flip-chip devices using indium microspheres on Au-passivated Nb or NbN as under-bump metallization layer
Achintya Paradkar, Paul Nicaise, et al.
Special issue APL organic and hybrid photodetectors
Karl Leo, Canek Fuentes-Hernandez, et al.