The conduction type of boron (B)-doped silicon (Si) changes from p type into n type by the 1×1017 cm−2 fluence irradiation (high-fluence irradiation) of 1 MeV electrons. The temperature dependence of the electron concentration n(T) obtained from Hall-effect measurements is reported. From the analysis of n(T), the density and energy level of the defects created by the high-fluence irradiation are determined to be 1.5×1014 cm−3 and EC−0.30 eV, respectively, where EC is the energy level at the bottom of the conduction band. Moreover, the compensated density is 9.5×1013 cm−3, which is in agreement with the density of B that acts as an acceptor, determined by Fourier-transform infrared spectroscopy.

1.
H. Kitahara, S. Tanaka, Y. Kanamori, and T. Itoh, 46th International Astronautical Congress, Oslo, 1995, p. 1.
2.
T.
Hisamatsu
,
O.
Kawasaki
,
S.
Matsuda
,
T.
Nakao
, and
Y.
Wakow
,
Sol. Energy Mater. Sol. Cells
50
,
331
(
1998
).
Google Scholar
 
3.
M.
Yamaguchi
,
S. J.
Taylor
,
M.
Yang
,
S.
Matsuda
,
O.
Kawasaki
, and
T.
Hisamatsu
,
Jpn. J. Appl. Phys., Part 1
35
,
3918
(
1996
).
Google Scholar
 
4.
S. J.
Taylor
,
M.
Yamaguchi
,
M.
Yang
,
M.
Imaizumi
,
S.
Matsuda
,
O.
Kawasaki
, and
T.
Hisamatsu
,
Appl. Phys. Lett.
70
,
2165
(
1997
).
Google Scholar
 
5.
S. J.
Taylor
,
M.
Yamaguchi
,
S.
Matsuda
,
T.
Hisamatsu
, and
O.
Kawasaki
,
J. Appl. Phys.
82
,
3239
(
1997
).
Google Scholar
 
6.
T.
Yamaguchi
,
S. J.
Taylor
,
S.
Watanabe
,
K.
Ando
,
M.
Yamaguchi
,
T.
Hisamatsu
, and
S.
Matsuda
,
Appl. Phys. Lett.
72
,
1226
(
1998
).
Google Scholar
 
7.
S. J.
Taylor
,
M.
Yamaguchi
,
T.
Yamaguchi
,
S.
Watanabe
,
K.
Ando
,
S.
Matsuda
,
T.
Hisamatsu
, and
S. I.
Kim
,
J. Appl. Phys.
83
,
4620
(
1998
).
Google Scholar
 
8.
A.
Khan
,
M.
Yamaguchi
,
S. J.
Taylor
,
T.
Hisamatsu
, and
S.
Matsuda
,
Jpn. J. Appl. Phys., Part 1
38
,
2679
(
1999
).
Google Scholar
 
9.
H.
Matsuura
,
Y.
Uchida
,
T.
Hisamatsu
, and
S.
Matsuda
,
Jpn. J. Appl. Phys., Part 1
37
,
6034
(
1998
).
Google Scholar
 
10.
H.
Amekura
,
N.
Kishimoto
, and
K.
Kono
,
J. Appl. Phys.
84
,
4834
(
1998
).
Google Scholar
 
11.
H.
Matsuura
and
K.
Sonoi
,
Jpn. J. Appl. Phys., Part 2
35
,
L555
(
1996
).
Google Scholar
 
12.
H.
Matsuura
,
Jpn. J. Appl. Phys., Part 1
36
,
3541
(
1997
).
Google Scholar
 
13.
H.
Matsuura
,
T.
Kimoto
, and
H.
Matsunami
,
Jpn. J. Appl. Phys., Part 1
38
,
4013
(
1999
).
Google Scholar
 
14.
H.
Matsuura
,
Jpn. J. Appl. Phys., Part 1
38
,
5176
(
1999
).
Google Scholar
 
15.
S. C.
Baber
,
Thin Solid Films
72
,
201
(
1980
).
Google Scholar
 
16.
N. Nagai, H. Ishida, T. Hisamatsu, T. Aburaya, and S. Matsuda, J. Cryst. Growth (to be published).
17.
S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley, New York, 1981), Chap. 1.
18.
P.
Nubile
,
J. C.
Bourgoin
,
D.
Stievenard
,
D.
Deresmes
, and
G.
Strobl
,
J. Appl. Phys.
72
,
2673
(
1992
).
Google Scholar
 
19.
P. M.
Mooney
,
L. J.
Cheng
,
M.
Süli
,
J. D.
Gerson
, and
J. W.
Corbett
,
Phys. Rev. B
15
,
3836
(
1977
).
Google Scholar
 
20.
M. W.
Hüppi
,
J. Appl. Phys.
68
,
2702
(
1990
).
Google Scholar
 
This content is only available via PDF.
© 2000 American Institute of Physics.
2000
American Institute of Physics
You do not currently have access to this content.