The impact of electron heating on vertical electrical transport in superlattices is shown to cause an S-shaped current–voltage characteristic in addition to the conventional N type occurring at lower fields. Our calculations are supported by experimental data. The combination of S- and N-type instabilities leads to a modified structure of the high-field domains associated with self-generated GHz oscillations.
REFERENCES
1.
M. P. Shaw, V. V. Mitin, E. Schöll, and H. L. Grubin, The Physics of Instabilities in Solid State Electron Devices (Plenum, New York, 1992).
2.
3.
4.
J.
Kastrup
, R.
Klann
, H. T.
Grahn
, K.
Ploog
, L. L.
Bonilla
, J.
Galán
, M.
Kindelan
, M.
Moscoso
, and R.
Merlin
, Phys. Rev. B
52
, 13761
(1995
).5.
K.
Hofbeck
, J.
Grenzer
, E.
Schomburg
, A. A.
Ignatov
, K. F.
Renk
, D. G.
Pavel’ev
, Y.
Koschurinov
, B.
Melzer
, S.
Ivanov
, S.
Schaposchnikov
, and P. S.
Kop’ev
, Phys. Lett. A
218
, 349
(1996
).6.
J.
Kastrup
, R.
Hey
, K. H.
Ploog
, H. T.
Grahn
, L. L.
Bonilla
, M.
Kindelan
, M.
Moscoso
, A.
Wacker
, and J.
Galán
, Phys. Rev. B
55
, 2476
(1997
).7.
E.
Schomburg
, T.
Blomeier
, K.
Hofbeck
, J.
Grenzer
, S.
Brandl
, I.
Lingott
, A. A.
Ignatov
, K. F.
Renk
, D. G.
Pavel’ev
, Y.
Koschurinov
, B. Y.
Melzer
, V.
Ustinov
, S.
Ivanov
, A.
Zhukov
, and P. S.
Kop’ev
, Phys. Rev. B
58
, 4035
(1998
).8.
E.
Schomburg
, S.
Brandl
, K.
Hofbeck
, T.
Blomeier
, J.
Grenzer
, A. A.
Ignatov
, K. F.
Renk
, D. G.
Pavel’ev
, Y.
Koschurinov
, V.
Ustinov
, A.
Zhukov
, A.
Kovsch
, S.
Ivanov
, and P. S.
Kop’ev
, Appl. Phys. Lett.
72
, 1498
(1998
).9.
A.
Wacker
, A.-P.
Jauho
, S.
Rott
, A.
Markus
, P.
Binder
, and G. H.
Döhler
, Phys. Rev. Lett.
83
, 836
(1999
).10.
A. Wacker, in Theory of Transport Properties of Semiconductor Nanostructures, edited by E. Schöll (Chapman and Hall, London, 1998), Chap. 10.
11.
A. M.
Belyantsev
, A. A.
Ignatov
, V. I.
Piskarev
, M. A.
Sinitsyn
, V. I.
Shashkin
, B. S.
Yavich
, and M. L.
Yakovlev
, JETP Lett.
43
, 437
(1986
).12.
13.
E. Schöll, G. Schwarz, M. Patra, F. Prengel, and A. Wacker, in Proceedings of the 9th International Conference on Hot Carriers in Semiconductors, edited by K. Hess, J. P. Leburton, and U. Ravaioli (Plenum, New York, 1996), pp. 177–181.
14.
L. L.
Bonilla
, M.
Kindelan
, M.
Moscoso
, and S.
Venakides
, SIAM (Soc. Ind. Appl. Math.) J. Appl. Math.
57
, 1588
(1997
).15.
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