In this letter we show that thin films allow one to tailor the electric and the optical properties by controlling the hydrogen and oxygen content. By changing the O/H ratio, one can shift the optical band gap from 2.4 eV in the trihydride to 5.4 eV in the pure oxide. The thin films are insulating, and a resistivity as high as as compared to in the metallic state, is obtained. The thermal stability of the films depends strongly on the oxygen concentration. Samples with low oxygen content can be switched between the insulating and conducting state by reducing the hydrogen content. A reversible resistivity change of is demonstrated.
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