p-type lead sulphide (PbS) thin films were chemically deposited onto substrates. A three-contact pseudo-metal–oxide–semiconductor structure was designed in order to investigate the possibility of enhancing the signal-to-noise ratio in the PbS film by field effect. It was proved that on the entire sensitivity domain of PbS (1–3 μm at room temperature), the magnitude of the photoconductive signal generated by the PbS film depends on the polarity and value of the gate voltage. It is shown that the signal-to-noise ratio can be enhanced in this way with by at least 25% compared with the case when the gate electrode is in air (standard configuration for photoconductive measurements).
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