A mapping investigation was performed with photoluminescence-detected electron paramagnetic resonance (PL-EPR) via the yellow luminescence on nominally undoped, metal–organic vapor-phase epitaxy-grown GaN on sapphire. From the results, it is concluded that the PL-EPR signals observed in these samples represent different recombination channels which contribute to the yellow luminescence. Therefore, our results do not support the model of Glaser et al. [Phys. Rev. B 51, 13326 (1995)] for the mechanism of the yellow luminescence proposed recently.
Optically detected magnetic-resonance mapping on the yellow luminescence in GaN
F. K. Koschnick, K. Michael, J.-M. Spaeth, B. Beaumont, P. Gibart; Optically detected magnetic-resonance mapping on the yellow luminescence in GaN. Appl. Phys. Lett. 3 April 2000; 76 (14): 1828–1830. https://doi.org/10.1063/1.126179
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