A theory of scattering by charged dislocation lines in a two-dimensional electron gas (2DEG) is developed. The theory is directed towards understanding transport in AlGaN/GaN high-electron-mobility transistors which have a large number of line dislocations piercing through the 2DEG. The scattering time due to dislocations is derived for a 2DEG in closed form. This work identifies dislocation scattering as a mobility-limiting scattering mechanism in 2DEGs with high dislocation densities. The insensitivity of the 2DEG (as compared to bulk) to dislocation scattering is explained by the theory.
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Research Article| March 27 2000
Dislocation scattering in a two-dimensional electron gas
Arthur C. Gossard;
Debdeep Jena, Arthur C. Gossard, Umesh K. Mishra; Dislocation scattering in a two-dimensional electron gas. Appl. Phys. Lett. 27 March 2000; 76 (13): 1707–1709. https://doi.org/10.1063/1.126143
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