A theory of scattering by charged dislocation lines in a two-dimensional electron gas (2DEG) is developed. The theory is directed towards understanding transport in AlGaN/GaN high-electron-mobility transistors which have a large number of line dislocations piercing through the 2DEG. The scattering time due to dislocations is derived for a 2DEG in closed form. This work identifies dislocation scattering as a mobility-limiting scattering mechanism in 2DEGs with high dislocation densities. The insensitivity of the 2DEG (as compared to bulk) to dislocation scattering is explained by the theory.

1.
S.
Nakamura
,
M.
Senoh
,
N.
Isawa
,
S. I.
Nagahama
,
T.
Yamada
,
T.
Matshushita
,
Y.
Sigimto
, and
H.
Kikoyu
,
Appl. Phys. Lett.
70
,
1417
(
1997
).
Google Scholar
 
2.
H.
Sakai
,
T.
Takeuchi
,
S.
Sota
,
M.
Kasturagawa
,
M.
Komori
,
H.
Amano
, and
I.
Akasaki
,
J. Cryst. Growth
189/190
,
831
(
1998
).
Google Scholar
 
3.
Y. F.
Wu
,
B. P.
Keller
,
P.
Fini
,
S.
Keller
,
T. J.
Jenkins
,
L. T.
Kehias
,
S. P.
DenBaars
, and
U. K.
Mishra
,
IEEE Electron Device Lett.
19
,
50
(
1998
).
Google Scholar
 
4.
D.
Kapolnek
,
X. H.
Wu
,
B.
Heying
,
S.
Keller
,
B. P.
Keller
,
U. K.
Mishra
,
S. P.
DenBaars
, and
J. S.
Speck
,
Appl. Phys. Lett.
67
,
1541
(
1995
).
Google Scholar
 
5.
S. D.
Lester
,
F. A.
Ponce
,
M. G.
Craford
, and
D. A.
Steigerwald
,
Appl. Phys. Lett.
66
,
1249
(
1995
).
Google Scholar
 
6.
K.
Kato
,
T.
Kusunoki
,
C.
Takenaka
,
T.
Tanahashi
, and
K.
Nakajima
,
J. Cryst. Growth
115
,
174
(
1991
).
Google Scholar
 
7.
H.
Marchand
,
X. H.
Wu
,
J. P.
Ibbetson
,
P. T.
Fini
,
P.
Kozodoy
,
S.
Keller
,
J. S.
Speck
,
S. P.
DenBaars
, and
U. K.
Mishra
,
Appl. Phys. Lett.
73
,
747
(
1998
).
Google Scholar
 
8.
D. C.
Look
and
J. R.
Sizelove
,
Phys. Rev. Lett.
82
,
1237
(
1999
).
Google Scholar
 
9.
M.
Shur
,
B.
Gelmont
, and
M. A.
Khan
,
J. Electron. Mater.
25
,
5
,
777
(
1996
).
Google Scholar
 
10.
Y.
Zhang
and
J.
Singh
,
J. Appl. Phys.
85
,
587
(
1999
).
Google Scholar
 
11.
L.
Hsu
and
W.
Walukiewich
,
Phys. Rev. B
56
,
1520
(
1997
).
Google Scholar
 
12.
D.
Zhao
and
K. J.
Kuhn
,
IEEE Trans. Electron Devices
38
,
2582
(
1991
).
Google Scholar
 
13.
T.
Ando
,
A. B.
Fowler
and
F.
Stern
,
Rev. Mod. Phys.
54
,
437
(
1982
).
Google Scholar
 
14.
J. H. Davies, The Physics of Low Dimensional Semiconductors (Cambridge University Press, Cambridge, 1998).
15.
N. G.
Weimann
,
L. F.
Eastman
,
D.
Doppalapudi
,
H. M.
Ng
, and
T. D.
Moustakas
,
J. Appl. Phys.
83
,
3656
(
1998
).
Google Scholar
 
16.
H. M.
Ng
,
D.
Doppalapudi
,
T. D.
Moustakas
,
N. G.
Weimann
, and
L. F.
Eastman
,
Appl. Phys. Lett.
73
,
821
(
1998
).
Google Scholar
 
17.
B.
Pödör
,
Phys. Status Solidi
16
,
K167
(
1966
).
Google Scholar
 
18.
C. R.
Elsass
,
I. P.
Smorchkova
,
B.
Heying
,
E.
Haus
,
P.
Fini
,
K.
Maranowski
,
J. P.
Ibbetson
,
S.
Keller
,
P. M.
Petroff
,
S. P.
Denbaars
,
U. K.
Mishra
, and
J. S.
Speck
,
Appl. Phys. Lett.
74
,
3528
(
1999
).
Google Scholar
 
19.
I. P.
Smorchkova
,
C. R.
Elsass
,
J. P.
Ibbetson
,
R.
Vetury
,
B.
Heying
,
P.
Fini
,
E.
Haus
,
S. P.
DenBaars
,
J. S.
Speck
, and
U. K.
Mishra
,
J. Appl. Phys.
86
,
4520
(
1999
).
Google Scholar
 
This content is only available via PDF.
© 2000 American Institute of Physics.
2000
American Institute of Physics
You do not currently have access to this content.