Individual semiconducting single-walled carbon nanotubes (SWNTs) of various diameters are studied by electrical measurements. Transport through a semiconducting SWNT involves thermal activation at high temperatures, and tunneling through a reverse biased metal–tube junction at low temperatures. Under high bias voltages, current–voltage (I–V) characteristics of semiconducting SWNTs exhibit pronounced asymmetry with respect to the bias polarity, as a result of local gating. SWNT transistors that mimic conventional p-metal-oxide-semiconductor field-effect transistor with similar I–V characteristics and high transconductance are enabled.

1.
M. S. Dresselhaus, G. Dresselhaus, and P. C. Eklund, Science of Fullerenes and Carbon Nanotubes (Academic, San Diego, 1996).
2.
B. I.
Yakobson
and
R. E.
Smalley
,
Am. Sci.
85
,
324
(
1997
).
3.
C.
Dekker
,
Phys. Today
52
,
22
(
1999
).
4.
C.
Kane
,
L.
Balents
, and
M. P. A.
Fisher
,
Phys. Rev. Lett.
79
,
5086
(
1997
).
5.
C. L.
Kane
,
E. J.
Mele
,
R. S.
Lee
,
J. E.
Fischer
,
P.
Petit
,
H.
Dai
,
A.
Thess
,
R. E.
Smalley
,
A. R. M.
Verschueren
,
S. J.
Tans
, and
C.
Dekker
,
Europhys. Lett.
6
,
683
(
1998
).
6.
C. L.
Kane
and
E. J.
Mele
,
Phys. Rev. Lett.
78
,
1932
(
1997
).
7.
S. J.
Tans
,
M. H.
Devoret
,
H. J.
Dai
,
A.
Thess
,
R. E.
Smalley
,
L. J.
Geerligs
, and
C.
Dekker
,
Nature (London)
386
,
474
(
1997
).
8.
S.
Tans
,
A.
Verschueren
, and
C.
Dekker
,
Nature (London)
393
,
49
(
1998
).
9.
R.
Martel
,
T.
Schmidt
,
H. R.
Shea
,
T.
Hertel
, and
P.
Avouris
,
Appl. Phys. Lett.
73
,
2447
(
1998
).
10.
M.
Bockrath
,
D. H.
Cobden
, and
P. L.
McEuen
,
Science
275
,
1922
(
1997
).
11.
D. H.
Cobden
,
M.
Bockrath
,
P. L.
McEuen
,
A. G.
Rinzler
, and
R. E.
Smalley
,
Phys. Rev. Lett.
81
,
681
(
1998
).
12.
M.
Bockrath
,
D. H.
Cobden
,
J.
Lu
,
A. G.
Rinzler
,
R. E.
Smalley
,
T.
Balents
, and
P. L.
McEuen
,
Nature (London)
397
,
598
(
1999
).
13.
J.
Kong
,
H.
Soh
,
A.
Cassell
,
C. F.
Quate
, and
H.
Dai
,
Nature (London)
395
,
878
(
1998
).
14.
H. T.
Soh
,
C. F.
Quate
,
A. F.
Morpurgo
,
C. M.
Marcus
,
J.
Kong
, and
H. J.
Dai
,
Appl. Phys. Lett.
75
,
627
(
1999
).
15.
J.
Kong
,
C.
Zhou
,
A.
Morpurgo
,
H. T.
Soh
,
C. F.
Quate
,
C.
Marcus
, and
H.
Dai
,
Appl. Phys. A: Solids Surf.
69
,
305
(
1999
).
16.
M. P.
Lepselter
and
S. M.
Sze
,
Proc. IEEE
56
,
1400
(
1968
).
17.
A conversion factor between the band energy shift ΔE and the gate voltage ΔVg is estimated to be ∼3 meV/V using a method described in Ref. 10.
18.
S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981).
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