We studied transport through ultrasmall Si quantum-dot transistors fabricated from siliconon-insulator wafers. At high temperatures, 4<T<100 K, the devices show single-electron or single-hole transport through the lithographically defined dot. At T<4 K, current through the devices is characterized by multidot transport. From the analysis of the transport in samples with double-dot characteristics, we conclude that extra dots are formed inside the thermally grown gate oxide which surrounds the lithographically defined dot.

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