Photoreflectance (PR) spectra of high-purity, nearly free-standing GaN substrate were compared with emission and reflectance spectra, which were analyzed based on a model exciton-polariton picture in which A, B, and C free excitons couple simultaneously to an electromagnetic wave. The GaN substrate with reduced dislocation density was prepared by lateral epitaxial overgrowth technique and it exhibited predominant excitonic emissions with the decay time nearly 1 ns even at room temperature. The transition energies obtained from the PR spectrum agree with the energies of bottlenecks of the excitonic polariton branches. The result means that perturbation-induced change in the dielectric function is mainly due to polaritons. Temperature dependence of the A-exciton energy was well described using a model which assumes Einstein phonons.
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20 March 2000
Research Article|
March 20 2000
Photoreflectance spectra of excitonic polaritons in GaN substrate prepared by lateral epitaxial overgrowth
S. F. Chichibu;
S. F. Chichibu
Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573, Japan
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K. Torii;
K. Torii
Department of Electrical, Electronics and Computer Engineering, Waseda University, 3-4-1 Ohkubo, Shinjuku, Tokyo 169-8555, Japan
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T. Deguchi;
T. Deguchi
Department of Electrical, Electronics and Computer Engineering, Waseda University, 3-4-1 Ohkubo, Shinjuku, Tokyo 169-8555, Japan
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T. Sota;
T. Sota
Department of Electrical, Electronics and Computer Engineering, Waseda University, 3-4-1 Ohkubo, Shinjuku, Tokyo 169-8555, Japan
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A. Setoguchi;
A. Setoguchi
Department of Electrical Engineering, Science University of Tokyo, 2641 Yamazaki, Noda, Chiba 278-8510, Japan
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H. Nakanishi;
H. Nakanishi
Department of Electrical Engineering, Science University of Tokyo, 2641 Yamazaki, Noda, Chiba 278-8510, Japan
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T. Azuhata;
T. Azuhata
Department of Materials Science and Technology, Hirosaki University, 3 Bunkyo-cho, Hirosaki, Aomori 036-8561, Japan
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S. Nakamura
S. Nakamura
Department of Research and Development, Nichia Chemical Industries Ltd., 491 Oka, Kaminaka, Anan, Tokushima 774-8601, Japan
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Appl. Phys. Lett. 76, 1576–1578 (2000)
Article history
Received:
September 03 1999
Accepted:
January 21 2000
Citation
S. F. Chichibu, K. Torii, T. Deguchi, T. Sota, A. Setoguchi, H. Nakanishi, T. Azuhata, S. Nakamura; Photoreflectance spectra of excitonic polaritons in GaN substrate prepared by lateral epitaxial overgrowth. Appl. Phys. Lett. 20 March 2000; 76 (12): 1576–1578. https://doi.org/10.1063/1.126100
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