The interface structure of bonded Si(001) wafers with twist angle 6.5 ° is studied as a function of annealing temperature. An ordered structure is observed in x-ray diffraction by monitoring a satellite reflection due to the periodic modulation near the interface, which results from the formation of a regular array of screw dislocations. This satellite reflection first appears at an annealing temperature of 800 °C, and increases abruptly up to temperatures of 1000 °C. We propose that this transition occurs when there is sufficient mobility for the reorganization of atomic steps and terraces in the interface region.

Topics
Semiconductor device fabrication, Crystallographic defects, Annealing, X-ray diffraction, Interfacial properties
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