Blue InGaN single-quantum-well-structure laser diodes (LDs) with an emission wavelength of 450 nm were grown on an epitaxially laterally overgrown GaN substrate by a metalorganic chemical vapor deposition method. The threshold current density and voltage were and 6.1 V, respectively. The estimated lifetime was approximately 200 h under room-temperature continuous-wave operation at an output power of 5 mW. When the number of InGaN well layers of the LDs with emission wavelengths longer than 435 nm varied from one to three, the lowest threshold current density was obtained when the number of well layers was one.
This content is only available via PDF.
© 2000 American Institute of Physics.
American Institute of Physics