Blue InGaN single-quantum-well-structure laser diodes (LDs) with an emission wavelength of 450 nm were grown on an epitaxially laterally overgrown GaN substrate by a metalorganic chemical vapor deposition method. The threshold current density and voltage were 4.6 kA cm−2 and 6.1 V, respectively. The estimated lifetime was approximately 200 h under room-temperature continuous-wave operation at an output power of 5 mW. When the number of InGaN well layers of the LDs with emission wavelengths longer than 435 nm varied from one to three, the lowest threshold current density was obtained when the number of well layers was one.

1.
S.
Nakamura
,
M.
Senoh
,
N.
Iwasa
,
S.
Nagahama
,
T.
Yamada
, and
T.
Mukai
,
Jpn. J. Appl. Phys., Part 2
34
,
L1332
(
1995
).
Google Scholar
 
2.
T.
Mukai
,
H.
Narimatsu
, and
S.
Nakamura
,
Jpn. J. Appl. Phys., Part 2
37
,
L479
(
1998
).
Google Scholar
 
3.
S.
Nakamura
,
M.
Senoh
,
S.
Nagahama
,
N.
Iwasa
,
T.
Yamada
,
T.
Matsushita
,
H.
Kiyoku
, and
Y.
Sugimoto
,
Jpn. J. Appl. Phys., Part 2
35
,
L74
(
1996
).
Google Scholar
 
4.
K.
Itaya
,
M.
Onomura
,
J.
Nishino
,
L.
Sugiura
,
S.
Saito
,
M.
Suzuki
,
J.
Rennie
,
S.
Nunoue
,
M.
Yamamoto
,
H.
Fujimoto
,
Y.
Kokubun
,
Y.
Ohba
,
G.
Hatakoshi
, and
M.
Ishikawa
,
Jpn. J. Appl. Phys., Part 2
35
,
L1315
(
1996
).
Google Scholar
 
5.
S.
Nakamura
,
M.
Senoh
,
S.
Nagahama
,
N.
Iwasa
,
T.
Yamada
,
T.
Matsushita
,
Y.
Sugimoto
, and
H.
Kiyoku
,
Appl. Phys. Lett.
69
,
4056
(
1996
).
Google Scholar
 
6.
G. E.
Bulman
,
K.
Doverspike
,
S. T.
Sheppard
,
T. W.
Weeks
,
H. S.
Kong
,
H. M.
Dieringer
,
J. A.
Edmond
,
J. D.
Brown
,
J. T.
Swindell
, and
J. F.
Schetzena
,
Electron. Lett.
33
,
1556
(
1997
).
Google Scholar
 
7.
M. P.
Mack
,
A.
Abare
,
M.
Aizcorbe
,
P.
Kozodoy
,
S.
Keller
,
U. K.
Mishra
,
L.
Coldren
, and
S.
DenBaars
,
MRS Internet J. Nitride Semicond. Res.
2
,
41
(
1997
) (available from http://nsr.mij.mrs.org/2/41/).
Google Scholar
 
8.
A.
Kuramata
,
K.
Domen
,
R.
Soejima
,
K.
Horino
,
S.
Kubota
, and
T.
Tanahashi
,
Jpn. J. Appl. Phys., Part 2
36
,
L1130
(
1997
).
Google Scholar
 
9.
M.
Kneissl
,
D. P.
Bour
,
N. M.
Johnson
,
L. T.
Romano
,
B. S.
Krusor
,
R.
Donaldson
,
J.
Walker
, and
C.
Dunnrowicz
,
Appl. Phys. Lett.
72
,
1539
(
1998
).
Google Scholar
 
10.
F.
Nakamura
,
T.
Kobayashi
,
T.
Asatsuma
,
K.
Funato
,
K.
Yanashima
,
S.
Hashimoto
,
K.
Naganuma
,
S.
Tomioka
,
T.
Miyajima
,
E.
Miyajima
,
E.
Morita
,
H.
Kawai
, and
M.
Ikeda
,
J. Cryst. Growth
189/190
,
841
(
1998
).
Google Scholar
 
11.
H.
Katoh
,
T.
Takeuchi
,
C.
Anbe
,
R.
Mizumoto
,
S.
Yamaguchi
,
C.
Wetzel
,
H.
Amano
,
I.
Akasaki
,
Y.
Kaneko
, and
N.
Yamada
,
Jpn. J. Appl. Phys., Part 2
37
,
L444
(
1998
).
Google Scholar
 
12.
S.
Nakamura
,
M.
Senoh
,
S.
Nagahama
,
N.
Iwasa
,
T.
Yamada
,
T.
Matsushita
,
H.
Kiyoku
,
Y.
Sugimoto
,
T.
Kozaki
,
H.
Umemoto
,
M.
Sano
, and
K.
Chocho
,
Jpn. J. Appl. Phys., Part 2
37
,
L627
(
1998
).
Google Scholar
 
13.
S.
Nakamura
,
M.
Senoh
,
S.
Nagahama
,
T.
Matsushita
,
H.
Kiyoku
,
Y.
Sugimoto
,
T.
Kozaki
,
H.
Umemoto
,
M.
Sano
, and
T.
Mukai
,
Jpn. J. Appl. Phys., Part 2
38
,
L226
(
1999
).
Google Scholar
 
14.
S.
Nakamura
,
Jpn. J. Appl. Phys., Part 1
30
,
1620
(
1991
).
Google Scholar
 
15.
S.
Nakamura
,
M.
Senoh
,
S.
Nagahama
,
N.
Iwasa
,
T.
Yamada
,
T.
Matsushita
,
H.
Kiyoku
,
Y.
Sugimoto
,
T.
Kozaki
,
H.
Umemoto
,
M.
Sano
, and
K.
Chocho
,
Jpn. J. Appl. Phys., Part 2
37
,
L1020
(
1998
).
Google Scholar
 
16.
I.
Ho
and
G. B.
Stringfellow
,
Appl. Phys. Lett.
69
,
2701
(
1996
).
Google Scholar
 
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