We report organometallic vapor-phase epitaxy (OMVPE) growth and optical characteristics of 1.17–1.20 μm double-heterostructure laser diodes with three (7 nm)/GaAs(10 nm) quantum wells (GaInNAs/GaAs QWs). Three GaInNAs/GaAs QWs were successfully grown by OMVPE using dimethylhydrazine as the N precursor. Strong room-temperature photoluminescence at the 1.17–1.19 μm regime with a full width at half maximum of 33 meV has been routinely achieved. By using three GaInNAs/GaAs QWs as the gain medium of the GaInNAs laser, room temperature operation with a threshold current density of has been successfully demonstrated.
REFERENCES
1.
M.
Kondow
, K.
Uomi
, A.
Niwa
, T.
Kitatani
, S.
Watahiki
, and Y.
Yazawa
, Jpn. J. Appl. Phys., Part 1
35
, 1273
(1996
).2.
M. C.
Larson
, M.
Kondow
, T.
Kitatani
, K.
Nakahara
, K.
Tamura
, H.
Inoue
, and K.
Uomi
, IEEE Photonics Technol. Lett.
10
, 188
(1998
).3.
F.
Höhnsdorf
, J.
Koch
, C.
Agert
, and W.
Stolz
, J. Cryst. Growth
195
, 391
(1998
).4.
5.
6.
7.
Y.
Qiu
, C.
Jin
, S.
Francoeur
, S. A.
Nikishin
, and H.
Temkin
, Appl. Phys. Lett.
72
, 1999
(1998
).8.
9.
N. Y.
Li
, W. S.
Wong
, D. H.
Tomich
, K. L.
Kavanagh
, and C. W.
Tu
, J. Vac. Sci. Technol. B
14
, 2952
(1996
).10.
M. Kondow, K. Nakahara, T. Kitatani, M. Larson, and K. Uomi, presented at CLEO 1998, Paper No. CWL5.
11.
K.
Nakahara
, M.
Kondow
, T.
Kitatani
, M. C.
Larson
, and K.
Uomi
, IEEE Photonics Technol. Lett.
10
, 487
(1998
).12.
13.
P. W. Li, N. Y. Li, and J. Cheng (unpublished).
14.
15.
N. Y. Li, C. P. Hains, K. Yang, P. W. Li, and J. C. Cheng (unpublished).
16.
J. C. Cheng, N. Y. Li, C. P. Hains, and K. Yang, IEEE Photonics Technol. Lett. (to be published).
This content is only available via PDF.
© 1999 American Institute of Physics.
1999
American Institute of Physics
You do not currently have access to this content.
