Solid-state amorphization at tetragonal-Ta/Cu interfaces

This letter describes the formation of a thin amorphous layer at the tetragonal-Ta/Cu interfaces, which appear in copper metallization structures of microelectronic devices. The disordered layer grows up to 4 nm when annealed at between 400 and 600 °C. Since Ta and Cu are immiscible according to thermodynamic data, this is an unusual observation. A mechanism for the amorphous phase formation is proposed using both physical and chemical considerations. A high content of Cu is detected in the Ta layer up to 5 nm from the interface when annealed at 600 °C. Although the adhesion is promoted by the interface reaction, a sufficiently thick Ta underlayer is recommended for efficient blocking of Cu diffusion. Neither solid-state amorphization nor Cu diffusion into Ta is observed at bcc-Ta/Cu interfaces.