This letter reports the synthesis and dielectric properties of a porous poly(arylethers) material with an ultralow dielectric constant for interlayer dielectric applications in microelectronics. The porous polymer films were fabricated by a method of organic phase separation and evaporation. A dielectric constant of 1.8 was achieved for a porous film with an estimated porosity of 40%. The characterization of microstucture for the porous film showed numerous nanopores with an average size of 3 nm distributed uniformly throughout the film.

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