An infrared (IR) monitoring system has been developed for the detection and characterization of hydrocarbon contamination on 300 mm (12 in.) Si wafer surfaces. IR propagates through the Si wafer, internally reflecting about 600 times, which enables us to detect a trace of organic contamination on the wafer surface. The present system allows for the detection of hydrocarbon contamination on 300 mm Si wafer surfaces with a contamination level of below 1011 carbon atoms/cm2.

Topics
Chemical elements, Organic compounds, Semiconductors
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1999
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