The indium incorporation in hexagonal InGaN grown by plasma assisted molecular-beam epitaxy is studied by means of reflection high-energy electron diffraction (RHEED) intensity oscillations. It is demonstrated that, in addition to being incorporated in the alloy, indium acts as a surfactant, significantly changing the gallium incorporation. This surfactant effect has to be taken into account to allow for a precise in situ determination of the alloy composition. The indium concentrations determined in situ by RHEED intensity oscillations were found to be in good agreement with ex situ results of Rutherford backscattering spectroscopy. This method also allows us to directly assess the maximum In incorporation as a function of the substrate temperature.
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29 November 1999
Research Article|
November 29 1999
Indium incorporation during the growth of InGaN by molecular-beam epitaxy studied by reflection high-energy electron diffraction intensity oscillations
C. Adelmann;
C. Adelmann
CEA Grenoble, Département de la Recherche Fondamentale sur la Matière Condensée, SPMM, 17 rue des Martyrs, 38054 Grenoble Cedex 9, France
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R. Langer;
R. Langer
CEA Grenoble, Département de la Recherche Fondamentale sur la Matière Condensée, SPMM, 17 rue des Martyrs, 38054 Grenoble Cedex 9, France
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G. Feuillet;
G. Feuillet
CEA Grenoble, Département de la Recherche Fondamentale sur la Matière Condensée, SPMM, 17 rue des Martyrs, 38054 Grenoble Cedex 9, France
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B. Daudin
B. Daudin
CEA Grenoble, Département de la Recherche Fondamentale sur la Matière Condensée, SPMM, 17 rue des Martyrs, 38054 Grenoble Cedex 9, France
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C. Adelmann
R. Langer
G. Feuillet
B. Daudin
CEA Grenoble, Département de la Recherche Fondamentale sur la Matière Condensée, SPMM, 17 rue des Martyrs, 38054 Grenoble Cedex 9, France
Appl. Phys. Lett. 75, 3518–3520 (1999)
Article history
Received:
May 17 1999
Accepted:
October 01 1999
Citation
C. Adelmann, R. Langer, G. Feuillet, B. Daudin; Indium incorporation during the growth of InGaN by molecular-beam epitaxy studied by reflection high-energy electron diffraction intensity oscillations. Appl. Phys. Lett. 29 November 1999; 75 (22): 3518–3520. https://doi.org/10.1063/1.125374
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