The indium incorporation in hexagonal InGaN grown by plasma assisted molecular-beam epitaxy is studied by means of reflection high-energy electron diffraction (RHEED) intensity oscillations. It is demonstrated that, in addition to being incorporated in the alloy, indium acts as a surfactant, significantly changing the gallium incorporation. This surfactant effect has to be taken into account to allow for a precise in situ determination of the alloy composition. The indium concentrations determined in situ by RHEED intensity oscillations were found to be in good agreement with ex situ results of Rutherford backscattering spectroscopy. This method also allows us to directly assess the maximum In incorporation as a function of the substrate temperature.

1.
S. Nakamura and G. Fasol, The Blue Laser Diode (Springer, Berlin, 1997).
2.
R.
Singh
,
D.
Doppalapudi
,
T. D.
Moustakas
, and
L. T.
Romano
,
Appl. Phys. Lett.
70
,
1089
(
1997
).
3.
J. M.
van Hove
,
P. P.
Chow
,
A. M.
Wowchak
,
J. J.
Klaassen
,
R.
Hickman
II
, and
C.
Polley
,
J. Vac. Sci. Technol. B
16
,
1286
(
1998
).
4.
T.
Böttcher
,
S.
Einfeldt
,
V.
Kirchner
,
S.
Figge
,
H.
Heinke
,
D.
Hommel
,
H.
Selke
, and
P. L.
Ryder
,
Appl. Phys. Lett.
73
,
3232
(
1998
).
5.
H.
Chen
,
A. R.
Smith
,
R. M.
Feenstra
,
D. W.
Greve
, and
J. E.
Northrup
,
MRS Internet J. Nitride Semicond. Res.
4S1
,
G9
.
5
(
1999
)
6.
L. K.
Li
,
Z.
Yang
, and
W. I.
Wang
,
Electron. Lett.
31
,
2127
(
1995
).
7.
B.
Daudin
and
F.
Widmann
,
J. Cryst. Growth
182
,
1
(
1997
).
8.
N.
Grandjean
and
J.
Massies
,
Appl. Phys. Lett.
71
,
1816
(
1997
).
9.
N.
Grandjean
and
J.
Massies
,
Appl. Phys. Lett.
72
,
1078
(
1998
).
10.
F.
Widmann
,
B.
Daudin
,
G.
Feuillet
,
J.-L.
Rouvière
, and
N.
Pelekanos
,
Appl. Phys. Lett.
73
,
2642
(
1998
).
11.
C.
Adelmann
,
R.
Langer
,
E.
Martinez-Guerrero
,
H.
Mariette
,
G.
Feuillet
, and
B.
Daudin
,
J. Appl. Phys.
86
,
4322
(
1999
).
This content is only available via PDF.
You do not currently have access to this content.