The microscopic spectral emission characteristic of an InGaN/GaN double-heterostructure light-emitting diode is directly imaged by highly spectrally and spatially resolved scanning electroluminescence microscopy under operation as a function of injection current density. The luminescence intensity maps and especially the peak-wavelength scanning images provide access to the optical quality of the final device and yield direct images of the In fluctuations with 1 μm spatial resolution. Indium concentrations varying from 6% to 9% are found in the active InGaN region of the ultraviolet diode emitting at 400 nm. While for low injection current densities the electroluminescence is dominated by emission from the p GaN originating from the whole accessible area, the emission from the InGaN active layer increases and takes over for higher injection conditions showing a strongly localized spatial emission characteristic. Correlation of the results with low-temperature scanning photoluminescence microscopy enables the identification of the underlying recombination processes.
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29 November 1999
Research Article|
November 29 1999
Direct imaging of the spectral emission characteristic of an InGaN/GaN-ultraviolet light-emitting diode by highly spectrally and spatially resolved electroluminescence and photoluminescence microscopy
Peter Fischer;
Peter Fischer
Institute of Experimental Physics, Otto-von-Guericke University, 39016 Magdeburg, Germany
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Jürgen Christen;
Jürgen Christen
Institute of Experimental Physics, Otto-von-Guericke University, 39016 Magdeburg, Germany
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Margit Zacharias;
Margit Zacharias
Institute of Experimental Physics, Otto-von-Guericke University, 39016 Magdeburg, Germany
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Veit Schwegler;
Veit Schwegler
Department of Optoelectronics, University of Ulm, 89069 Ulm, Germany
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Christoph Kirchner;
Christoph Kirchner
Department of Optoelectronics, University of Ulm, 89069 Ulm, Germany
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Markus Kamp
Markus Kamp
Department of Optoelectronics, University of Ulm, 89069 Ulm, Germany
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Appl. Phys. Lett. 75, 3440–3442 (1999)
Article history
Received:
June 01 1999
Accepted:
October 01 1999
Citation
Peter Fischer, Jürgen Christen, Margit Zacharias, Veit Schwegler, Christoph Kirchner, Markus Kamp; Direct imaging of the spectral emission characteristic of an InGaN/GaN-ultraviolet light-emitting diode by highly spectrally and spatially resolved electroluminescence and photoluminescence microscopy. Appl. Phys. Lett. 29 November 1999; 75 (22): 3440–3442. https://doi.org/10.1063/1.125289
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