The optical gain spectra for compressive-strained and lattice-matched GaInNAs/GaAs quantum wells are computed using a microscopic laser theory. From these spectra, the peak gain and carrier radiative decay rate as functions of carrier density are determined. These dependences allow the study of lasing threshold current density for different GaInNAs/GaAs laser structures.
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For a text book discussion, see W. W. Chow and S. W. Koch, Semiconductor-Laser Fundamentals: Physics of the Gain Materials (Springer, Berlin, 1999).
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© 1999 American Institute of Physics.
1999
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