Thin films of (001)-oriented have been epitaxially deposited on and (001) substrates. Comparison of their transport and magnetic properties with those of polycrystalline ceramic samples shows a metallic versus semiconductor temperature dependence and a saturation magnetization at 10 K of 3.2 in the film as against 3.0 for a tetragonal polycrystalline sample. However, the Curie temperature K is reduced from 415 K found for the tetragonal ceramic, which lowers at 300 K in the thin films to 2.0 compared to 2.2 in the ceramics. A Wheatstone bridge arrangement straddling a bicrystal boundary has been used to verify that spin-dependent electron transfer through a grain boundary is responsible for the low-field magnetoresistance found in polycrystalline samples below
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1 November 1999
Research Article|
November 01 1999
Intra- versus intergranular low-field magnetoresistance of thin films
H. Q. Yin;
H. Q. Yin
Texas Materials Institute, University of Texas at Austin, Austin, Texas 78712-1063
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J.-S. Zhou;
J.-S. Zhou
Texas Materials Institute, University of Texas at Austin, Austin, Texas 78712-1063
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J.-P. Zhou;
J.-P. Zhou
Texas Materials Institute, University of Texas at Austin, Austin, Texas 78712-1063
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R. Dass;
R. Dass
Texas Materials Institute, University of Texas at Austin, Austin, Texas 78712-1063
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J. T. McDevitt;
J. T. McDevitt
Texas Materials Institute, University of Texas at Austin, Austin, Texas 78712-1063
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John B. Goodenough
John B. Goodenough
Texas Materials Institute, University of Texas at Austin, Austin, Texas 78712-1063
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Appl. Phys. Lett. 75, 2812–2814 (1999)
Article history
Received:
July 26 1999
Accepted:
August 31 1999
Citation
H. Q. Yin, J.-S. Zhou, J.-P. Zhou, R. Dass, J. T. McDevitt, John B. Goodenough; Intra- versus intergranular low-field magnetoresistance of thin films. Appl. Phys. Lett. 1 November 1999; 75 (18): 2812–2814. https://doi.org/10.1063/1.125158
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