H+ implantation of SiC is the basis for a thin-film transfer process, which when combined with oxidation and hydrophilic wafer bonding, can be exploited to produce silicon carbide-on-insulator material useful as a wide-band-gap semiconductor. This thin-film transfer process has been successfully applied to Si to produce a commercial silicon-on-insulator material. The efficacy of hydrogen to produce thin-film separation was studied by investigation of H+-induced exfoliation in implanted SiC. Results showed that the onset and degree of exfoliation of SiC depends initially upon the concentration of implanted H+. However, the dose dependence of exfoliation exhibits a rather marked retrograde behavior. The degree of exfoliation eventually starts to decrease with increasing ion dose until exfoliation is completely suppressed. This behavior is attributed to a competition between the positive effects of hydrogen on exfoliation and the negative effects of ion-induced damage. Experiments were done to isolate the effects of the hydrogen–silicon chemistry from that of implant damage. Damage is reduced independently of H+ dosage by elevating the temperature of the SiC during implant in order to promote dynamic annealing. This will be shown to have a dramatic effect upon exfoliation. The “hot” implant lowers the H+ fluence required to affect thin-film separation, making the process more efficient, and producing SiC material with fewer defects.

1.
M.
Bruel
,
Electron. Lett.
37
,
1201
(
1995
).
2.
W. K.
Chu
,
R. H.
Kastle
,
R. F.
Lever
,
S. F.
Mader
, and
B. J.
Masters
,
Phys. Rev. B
16
,
3851
(
1977
).
3.
C. C.
Griffioen
,
J. H.
Evans
,
P. C. D.
Jong
, and
A.
van Veen
,
Nucl. Instrum. Methods Phys. Res. B
27
,
417
(
1987
).
4.
M. K.
Weldon
,
V. E.
Marsico
,
Y. J.
Chabal
,
A.
Agarwal
,
D. J.
Eaglesham
,
J.
Sapjeta
,
W. L.
Brown
,
D. C.
Jacobson
,
Y.
Caudano
,
S. B.
Christman
, and
E. E.
Chaban
,
J. Vac. Sci. Technol. B
15
,
1065
(
1997
).
5.
A.
Agarwal
,
T. E.
Haynes
,
V. C.
Venezia
, and
O. W.
Holland
,
Appl. Phys. Lett.
72
,
1086
(
1998
).
6.
O. W. Holland and R. B. Gregory (unpublished).
7.
L. C. Feldman, J. W. Mayer, and S. T. Picraux, Material Analysis by Ion Channeling (Academic, New York, 1982).
8.
T.
Dalibor
,
C.
Peppermüller
,
G.
Pensi
,
S.
Sridhara
,
R. P.
Devaty
,
W. J.
Choyke
,
A.
Itoh
,
T.
Kimoto
, and
H.
Matsunami
,
Inst. Phys. Conf. Ser.
142
,
517
(
1996
).
9.
V. C. Venezia, T. E. Haynes, A. Agarwal, D. J. Eaglesham, O. W. Holland, M. K. Weldon, and Y. J. Chabal, in Proceedings of the Eighth International Symposium on Silicon Materials Science and Technology, edited by H. R. Huff, H. Tsuya, and U. Gosele (Electrochemical Society, Pennington, NJ, 1998), p. 1385.
This content is only available via PDF.
You do not currently have access to this content.