High-quality alloys spanning the entire compositional range have been grown by molecular-beam epitaxy. Good compositional control can be obtained by adjusting the beam equivalent pressure ratio of Se to Zn during growth. Double-crystal x-ray rocking curves with full widths at half maximum as narrow as 70 arcsec were obtained suggesting excellent crystalline quality. The p-type doping with nitrogen of alloys having Te contents from 0% to 100% has been systematically studied. The free hole concentration increases from to as the Te content increases from 12% to 40%. The N-doped ZnSeTe lattice matched to InP has a free hole concentration of This highly doped material was used as the p-type ohmic contact layer in light-emitting diodes made from ZnCdMgSe/ZnCdSe quantum-well structures grown on InP substrates that emit in the red, green and blue regions.
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25 October 1999
Research Article|
October 25 1999
Molecular-beam epitaxy growth and nitrogen doping of alloys grown on InP substrates
W. Lin;
W. Lin
Department of Chemistry, City College and Graduate Center of the City University of New York, New York, New York 10031
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B. X. Yang;
B. X. Yang
Department of Chemistry, City College and Graduate Center of the City University of New York, New York, New York 10031
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S. P. Guo;
S. P. Guo
Department of Chemistry, City College and Graduate Center of the City University of New York, New York, New York 10031
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A. Elmoumni;
A. Elmoumni
Department of Chemistry, City College and Graduate Center of the City University of New York, New York, New York 10031
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F. Fernandez;
F. Fernandez
Department of Chemistry, City College and Graduate Center of the City University of New York, New York, New York 10031
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M. C. Tamargo
M. C. Tamargo
Department of Chemistry, City College and Graduate Center of the City University of New York, New York, New York 10031
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Appl. Phys. Lett. 75, 2608–2610 (1999)
Article history
Received:
April 26 1999
Accepted:
April 30 1999
Citation
W. Lin, B. X. Yang, S. P. Guo, A. Elmoumni, F. Fernandez, M. C. Tamargo; Molecular-beam epitaxy growth and nitrogen doping of alloys grown on InP substrates. Appl. Phys. Lett. 25 October 1999; 75 (17): 2608–2610. https://doi.org/10.1063/1.125093
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