We present measurements of mechanical stress in silicon device structures by ultraviolet (UV) micro-Raman spectroscopy. The shorter wavelength of the UV light (364 nm) is the basis for two major improvements over conventionally used blue light (458 nm): The smaller penetration depth of only 15 nm (vs 300 nm for blue light) probes the stress very close to the surface, and a smaller laser spot on the sample (0.7 μm vs 0.9 μm) results in higher spatial resolution. A comparison of stress patterns obtained in the same sample with 364 nm (UV) and 458 nm (blue) light demonstrates that areas of high stress, which are averaged out by longer wavelength light, can be detected with UV light.

Topics
Stress measurement, Ultraviolet light, Mechanical stress, Ultraviolet micro-Raman spectroscopy, Raman microspectroscopy
1.
I.
De Wolf
,
Semicond. Sci. Technol.
11
,
139
(
1996
).
Google Scholar
 
2.
K. F.
Dombrowski
and
I.
De Wolf
,
Solid State Phenom.
63-64
,
519
(
1998
).
Google Scholar
 
3.
K.
Ajito
,
J. P. H.
Sukamoto
,
L. A.
Nagahara
,
K.
Hashimoto
, and
A.
Fujishima
,
J. Vac. Sci. Technol. A
13
,
1234
(
1995
).
Google Scholar
 
4.
K.
Brunner
,
G.
Abstreiter
,
B. O.
Kolbesen
, and
H. W.
Meul
,
Appl. Surf. Sci.
39
,
116
(
1989
).
Google Scholar
 
5.
H. Park, K. S. Jones, J. A. Slinkman, and M. E. Law, Proceedings of the 1993 International Electron Devices Meeting (IEDM, Washington, DC, 1993), p. 303.
6.
A.
Hamada
,
T.
Furasawa
,
N.
Saito
, and
E.
Takeda
,
Semicond. Sci. Technol.
7
,
593
(
1992
).
Google Scholar
 
7.
S. Tiwari, M. V. Fischetti, P. M. Mooney, and J. J. Welser, Proceedings of the 1997 International Electron Devices Meeting (IEDM, Washington, DC, 1997), p. 939.
8.
S. M.
Hu
,
J. Appl. Phys.
70
,
53
(
1991
).
Google Scholar
 
9.
S.
Webster
,
D. N.
Batchelder
, and
D. A.
Smith
,
Appl. Phys. Lett.
72
,
1478
(
1998
).
Google Scholar
 
10.
D. E.
Aspnes
and
A. A.
Studna
,
Phys. Rev. B
27
,
985
(
1983
).
Google Scholar
 
11.
Note: Throughout this letter we use the same definition of penetration depth as given in Ref. 1.
12.
E.
Anastassakis
,
A.
Pinczuk
,
E.
Burstein
,
F. H.
Pollak
, and
M.
Cardona
,
Solid State Commun.
8
,
133
(
1970
).
Google Scholar
 
13.
P.
Sallagoity
,
F.
Gaillard
,
M.
Rivoire
,
M.
Paoli
,
M.
Haond
, and
S.
McClathie
,
Microelectron. Reliab.
38
,
271
(
1998
).
Google Scholar
 
14.
I.
De Wolf
,
H. E.
Maes
, and
S. K.
Jones
,
J. Appl. Phys.
79
,
7148
(
1996
).
Google Scholar
 
15.
Note: The laser spot sizes given are referring to the full width at 1/e2 of the Gaussian intensity distribution. The values were determined experimentally by crossing a thin metal edge and fitting the convolution of a Gaussian profile with a step function to the measured intensity distribution.
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© 1999 American Institute of Physics.
1999
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