The bonding nature of the surface atoms in the and reconstruction of the Si(100) surface has been characterized using local analysis technique in the context of nonorthogonal tight binding approximation. We demonstrate the capability of this method to yield a real-space picture of the bonding character of the surface atoms for these systems. We also report our analysis of the surface atom bonds on the Si(100) substrate with single-dimer vacancy.
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© 1999 American Institute of Physics.
1999
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