Switching properties of $Pb(Nb, Zr, Ti)O3$ capacitors using $SrRuO3$ electrodes

We report on ferroelectric properties of polycrystalline sol-gel derived $Pb(Nb, Zr, Ti)O3$ (PNZT) thin films with $SrRuO3$ (SRO) electrodes. The processing temperature of the bottom electrode was varied between 550 and 850 °C. The polarization of the ferroelectric capacitors was dependent on the processing temperature of the bottom electrode. The capacitors exhibit low switching fields (40 kV/cm), high resistivity (⁠$1011 Ω cm$ at 3 V) and high remanent polarization values (19 μC/cm² at 3 V), desirable properties for high-density ferroelectric memories. The activation field for these capacitors was measured to be ∼350 kV/cm and the polarization values exhibited a shallow dependence on the pulse width from 1 s to 1 μs. Fatigue, logic state retention, and dynamic imprint tests indicate robust capacitors from a memory viewpoint.