Charge trapping induced by hot carriers in a metal–oxide–semiconductor capacitor was studied with a scanning capacitance microscope (SCM). The local charge trapping/detrapping and the readout of the trapped charge in was performed using a SCM combined with an atomic force microscope. When applying a voltage between the conductive probe tip and the -type silicon substrate, hot carriers injected from silicon substrate into the generated a positive trapped charge in the 10-nm-thick layer. The resulting shift in capacitance–voltage curves due to the locally trapped charge was measured by the high-frequency measurement. For an application to the ultrahigh density data storage field, we investigated how the charge trapping and detrapping characteristics depend on the writing speed and bias voltage.
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20 September 1999
Research Article|
September 20 1999
Local charge trapping and detection of trapped charge by scanning capacitance microscope in the /Si system
J. W. Hong;
J. W. Hong
Department of Physics and Condensed Matter Research Institute, Seoul National University, Seoul 151-742, Korea
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S. M. Shin;
S. M. Shin
Department of Physics and Condensed Matter Research Institute, Seoul National University, Seoul 151-742, Korea
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C. J. Kang;
C. J. Kang
Department of Physics and Condensed Matter Research Institute, Seoul National University, Seoul 151-742, Korea
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Y. Kuk;
Y. Kuk
Department of Physics and Condensed Matter Research Institute, Seoul National University, Seoul 151-742, Korea
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Z. G. Khim;
Z. G. Khim
Department of Physics and Condensed Matter Research Institute, Seoul National University, Seoul 151-742, Korea
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Sang-il Park
Sang-il Park
PSIA Corp., Octo Bld., Yang-jae-Dong 5-6, Seoul 137-130, Korea
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Appl. Phys. Lett. 75, 1760–1762 (1999)
Article history
Received:
November 02 1998
Accepted:
July 26 1999
Citation
J. W. Hong, S. M. Shin, C. J. Kang, Y. Kuk, Z. G. Khim, Sang-il Park; Local charge trapping and detection of trapped charge by scanning capacitance microscope in the /Si system. Appl. Phys. Lett. 20 September 1999; 75 (12): 1760–1762. https://doi.org/10.1063/1.124811
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