We report on a direct measurement of the strain in a single Ge “quantum dot” island grown on Si by chemical vapor deposition. This transmission electron microscopy method is reliable: without the need for detailed modeling of the strain field, it measures the maximum in-plane displacement. Good agreement is found between the experimental value of average strain and finite element simulations assuming pure Ge. Thus no evidence of significant alloying with Si is observed.
Direct measurement of strain in a Ge island on Si(001)
Peter D. Miller, Chuan-Pu Liu, William L. Henstrom, J. Murray Gibson, Y. Huang, P. Zhang, T. I. Kamins, D. P. Basile, R. Stanley Williams; Direct measurement of strain in a Ge island on Si(001). Appl. Phys. Lett. 5 July 1999; 75 (1): 46–48. https://doi.org/10.1063/1.124272
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