We report on a direct measurement of the strain in a single Ge “quantum dot” island grown on Si by chemical vapor deposition. This transmission electron microscopy method is reliable: without the need for detailed modeling of the strain field, it measures the maximum in-plane displacement. Good agreement is found between the experimental value of average strain and finite element simulations assuming pure Ge. Thus no evidence of significant alloying with Si is observed.
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© 1999 American Institute of Physics.
1999
American Institute of Physics
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