We report investigations of the electronic transport properties carried out by means of the Hall technique for indium–tin–oxide thin films on glass after a variety of surface treatments. We find that oxygen-plasma treatments induce a significant increase in the carrier concentration, and a less significant decrease of mobilities with respect to “as-received” or aquaregia treated substrates. We consider that this is indicative of an increased concentration of defects, as a result of the plasma exposure.
REFERENCES
1.
2.
J. H.
Burroughes
, D. D. C.
Bradley
, A. R.
Brown
, R. N.
Marks
, K.
Mackay
, R. H.
Friend
, P. L.
Burn
, and A. B.
Holmes
, Nature (London)
347
, 539
(1990
).3.
S.
Karg
, J. C.
Scott
, J. R.
Salem
, and M.
Angelopoulos
, Synth. Met.
80
, 111
(1996
).4.
A.
Berntsen
, Y.
Croonen
, R.
Cuijpers
, B.
Habets
, C.
Liedenbaum
, H.
Schoo
, R. J.
Visser
, J.
Vleggaar
, and P.v.d.
Weijer
, Proc. SPIE
3148
, 264
(1997
).5.
S. A.
Carter
, M.
Angelopoulos
, S.
Karg
, P. J.
Brock
, and J. C.
Scott
, Appl. Phys. Lett.
70
, 2067
(1997
).6.
J. C.
Carter
, I.
Grizzi
, S. K.
Heeks
, D. J.
Lacey
, S. G.
Latham
, P. G.
May
, O. R.
Delospanos
, K.
Pichler
, C. R.
Towns
, and H. F.
Wittmann
, Appl. Phys. Lett.
71
, 34
(1997
).7.
C. C.
Wu
, C. I.
Wu
, J. C.
Sturm
, and A.
Kahn
, Appl. Phys. Lett.
70
, 1348
(1997
).8.
S.
Fujita
, T.
Sakamoto
, K.
Ueda
, K.
Ohta
, and S.
Fujita
, Jpn. J. Appl. Phys., Part 1
36
, 350
(1997
).9.
F.
Li
, H.
Tang
, J.
Shinar
, O.
Resto
, and S. Z.
Weisz
, Appl. Phys. Lett.
70
, 2741
(1997
).10.
J. S.
Kim
, M.
Granstrom
, R. H.
Friend
, N.
Johansson
, W. R.
Salaneck
, R.
Daik
, W. J.
Feast
, and F.
Cacialli
, J. Appl. Phys.
84
, 6859
(1998
).11.
J. S.
Kim
, R. H.
Friend
, and F.
Cacialli
, Appl. Phys. Lett.
74
, 3084
(1999
).12.
D. H.
Zhang
and H. L.
Ma
, Appl. Phys. A: Mater. Sci. Process.
62
, 487
(1996
).13.
M.
Suzuki
, Y.
Maeda
, and Y.
Sawada
, Jpn. J. Appl. Phys., Part 1
37
, 34
(1998
).14.
N.
Taga
, H.
Odaka
, Y.
Shigesato
, I.
Yasui
, M.
Kamei
, and T. E.
Haynes
, J. Appl. Phys.
80
, 978
(1996
).15.
B. H.
Lee
, I. G.
Kim
, S. W.
Cho
, and S. H.
Lee
, Thin Solid Films
302
, 25
(1997
).16.
17.
M.
Higuchi
, S.
Uekusa
, R.
Nakano
, and K.
Yokogawa
, J. Appl. Phys.
74
, 6710
(1993
).18.
T. E.
Haynes
, Y.
Shigesato
, I.
Yasui
, N.
Taga
, and H.
Odaka
, Nucl. Instrum. Methods Phys. Res. B
121
, 221
(1997
).19.
N.
Taga
, H.
Odaka
, Y.
Shigesato
, I.
Yasui
, M.
Kamei
, and T. E.
Haynes
, J. Appl. Phys.
80
, 978
(1996
).20.
21.
N.
Tessler
, N. T.
Harrison
, and R. H.
Friend
, Adv. Mater.
10
, 64
(1998
).22.
H. L. Hartnagel, A. L. Dawar, A. K. Jain, and C. Jagadish, Semiconducting Transparent Thin Films (Institute of Physics, Bristol, 1995), p. 211.
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