An important experimental observation in InGaN laser diodes (LDs), which is not yet fully understood, is that the measured mode spacing of the lasing spectra could be one order of magnitude larger than that “calculated” from the known cavity length. The aim of this letter is to shed light on the nature of the mode spacing “anomaly” in InGaN LDs. We have derived a formula which accurately determines the mode spacing in InGaN LDs. Our analysis has shown that the discrepancy between the “expected” and observed mode spacing is due to the effect of carrier-induced reduction of the refractive index under lasing conditions and this discrepancy decreases and naturally disappears as the threshold carrier density required for lasing decreases. Since the carrier-induced reduction of the refractive index is expected only from an electron–hole plasma state, our results naturally imply that electron–hole plasma recombination provides the optical gain in InGaN LDs, like in all other conventional III–V semiconductor lasers. The implications of our results on the design of nitride optoelectronic devices are also discussed.
Skip Nav Destination
Article navigation
22 February 1999
Research Article|
February 22 1999
Mode spacing “anomaly” in InGaN blue lasers
H. X. Jiang;
H. X. Jiang
Department of Physics, Kansas State University, Manhattan, Kansas 66506-2601
Search for other works by this author on:
J. Y. Lin
J. Y. Lin
Department of Physics, Kansas State University, Manhattan, Kansas 66506-2601
Search for other works by this author on:
Appl. Phys. Lett. 74, 1066–1068 (1999)
Article history
Received:
September 16 1998
Accepted:
December 18 1998
Citation
H. X. Jiang, J. Y. Lin; Mode spacing “anomaly” in InGaN blue lasers. Appl. Phys. Lett. 22 February 1999; 74 (8): 1066–1068. https://doi.org/10.1063/1.123483
Download citation file:
Pay-Per-View Access
$40.00
Sign In
You could not be signed in. Please check your credentials and make sure you have an active account and try again.
Citing articles via
Roadmap on photonic metasurfaces
Sebastian A. Schulz, Rupert. F. Oulton, et al.
Superconducting flip-chip devices using indium microspheres on Au-passivated Nb or NbN as under-bump metallization layer
Achintya Paradkar, Paul Nicaise, et al.
Sputter epitaxy of ScAlN films on GaN high electron mobility transistor structures
Tomoya Okuda, Shunsuke Ota, et al.
Related Content
Advantages of blue InGaN multiple-quantum well light-emitting diodes with InGaN barriers
Appl. Phys. Lett. (July 2009)
Monolithic InGaN-based white light-emitting diodes with blue, green, and amber emissions
Appl. Phys. Lett. (February 2008)
Characteristics of InGaN laser diodes in the pure blue region
Appl. Phys. Lett. (September 2001)
Light emission enhancement in blue InGaAlN/InGaN quantum well structures
Appl. Phys. Lett. (October 2011)
Highly stable temperature characteristics of InGaN blue laser diodes
Appl. Phys. Lett. (July 2006)